公开(公告)号：US20180233361A1

公开(公告)日：2018-08-16

申请号：US15422689

申请日：2017-02-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Daniel J. DECHENE ,  Geng HAN

IPC: H01L21/033 ,  H01L27/11 ,  H01L27/02 ,  H01L27/118

CPC classification number: H01L21/0337 ,  H01L21/8234

Abstract: A multiple exposure patterning process includes the incorporation of a dummy feature into the integration flow. The dummy feature, which is placed to overlie an existing masking layer and thus does not alter the printed image, improves the critical dimension uniformity (CDU) of main critical (non-dummy) features at the same masking level.