公开(公告)号：US20190279860A1

公开(公告)日：2019-09-12

申请号：US15916594

申请日：2018-03-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shariq SIDDIQUI ,  Han YOU ,  Xunyuan ZHANG ,  Rohit GALATAGE ,  Roger A. QUON ,  Christopher J. PENNY

IPC: H01L21/02 ,  H01L49/02 ,  C23C16/455 ,  H01L27/06

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to metal insulator metal capacitor devices and methods of manufacture. The method includes: depositing a bottom plate; depositing a dielectric film over the bottom plate; exposing the dielectric film to a gas; curing the dielectric film; and depositing a top plate over the dielectric film.