公开(公告)号：US20190279860A1

公开(公告)日：2019-09-12

申请号：US15916594

申请日：2018-03-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shariq SIDDIQUI ,  Han YOU ,  Xunyuan ZHANG ,  Rohit GALATAGE ,  Roger A. QUON ,  Christopher J. PENNY

IPC: H01L21/02 ,  H01L49/02 ,  C23C16/455 ,  H01L27/06

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to metal insulator metal capacitor devices and methods of manufacture. The method includes: depositing a bottom plate; depositing a dielectric film over the bottom plate; exposing the dielectric film to a gas; curing the dielectric film; and depositing a top plate over the dielectric film.

公开(公告)号：US20180102315A1

公开(公告)日：2018-04-12

申请号：US15290907

申请日：2016-10-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Roderick Alan AUGUR ,  Roger A. QUON ,  Shawn P. FETTEROLF

IPC: H01L23/522 ,  H01L21/311 ,  H01L49/02 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/5223 ,  H01L23/528 ,  H01L28/60

Abstract: The surface area of a surface area-dependent semiconductor device is increased by providing a dielectric layer, removing portion(s) of the dielectric layer, resulting in recession(s), and forming surface area-dependent semiconductor device(s), a portion of the device being formed along a sidewall of one, or more, of the recession(s). The resulting semiconductor structure includes a dielectric layer having recession(s) therein, and surface area-dependent semiconductor device(s) having a portion thereof formed along a sidewall of the recession(s).