公开(公告)号：US09536900B2

公开(公告)日：2017-01-03

申请号：US14284820

申请日：2014-05-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ravikumar Ramachandran ,  Huiling Shang ,  Keith Tabakman ,  Henry K. Utomo ,  Reinaldo A. Vega

IPC: H01L21/84 ,  H01L27/12 ,  H01L21/762 ,  H01L29/10

CPC classification number: H01L27/1211 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/845 ,  H01L29/1054

Abstract: A method of manufacturing a semiconductor device, by etching a region of an SOI substrate so that only a portion of the original semiconductor is present above the insulator layer. After etching has occurred, a different semiconductor material is grown in the etched region, and fins are formed. An isolation layer is deposited to a height above that the base semiconductor of the etched region.

Abstract translation: 通过蚀刻SOI衬底的区域使得只有一部分原始半导体存在于绝缘体层之上来制造半导体器件的方法。 在蚀刻发生之后，在蚀刻区域中生长不同的半导体材料，并且形成翅片。 隔离层沉积到高于蚀刻区域的基底半导体的高度。