公开(公告)号：US09263517B2

公开(公告)日：2016-02-16

申请号：US13835463

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Wagdi W. Abadeer ,  Kiran V. Chatty ,  Jason E. Cummings ,  Toshiharu Furukawa ,  Robert J. Gauthier ,  Jed H. Rankin ,  Robert R. Robison ,  William R. Tonti

IPC: H01L21/70 ,  H01L29/06 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12

CPC classification number: H01L29/0649 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/1203

Abstract: Various aspects include extremely thin semiconductor-on-insulator (ETSOI) layers. In one embodiment, an ETSOI layer includes a plurality of shallow trench isolations (STI) defining a plurality of distinct semiconductor-on-insulator (SOI) regions, the distinct SOI regions having at least three different thicknesses; at least one recess located within the distinct SOI regions; and an oxide cap over the at least one recess.

Abstract translation: 各种方面包括极薄的绝缘体上半导体（ETSOI）层。 在一个实施例中，ETSOI层包括限定多个不同的绝缘体上半导体（SOI）区域的多个浅沟槽隔离（STI），不同的SOI区域具有至少三个不同的厚度; 位于不同SOI区域内的至少一个凹部; 和在所述至少一个凹部上的氧化物盖。