公开(公告)号：US20190252320A1

公开(公告)日：2019-08-15

申请号：US15897416

申请日：2018-02-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jim Shih-Chun LIANG

IPC: H01L23/535 ,  H01L21/768 ,  H01L23/538

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to contact and interconnect structures and methods of manufacture. The structure includes: a single damascene contact structure in electrical contact with a contact of a source region or drain region; and a single damascene interconnect structure in a wiring layer and in direct electrical contact with the single damascene contact structure.

公开(公告)号：US20190103310A1

公开(公告)日：2019-04-04

申请号：US15724431

申请日：2017-10-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jim Shih-Chun LIANG ,  Keith Kwong Hon Wong

IPC: H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76877 ,  H01L21/76802 ,  H01L21/76873 ,  H01L23/49866 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53257 ,  H01L2924/01029

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to interconnect structures and methods of manufacture. The structure includes a metallization feature comprising a fill material and formed within a dielectric layer; at least one cap covering the fill material of the metallization feature, the at least one cap is comprised of a material different than the fill material of the metallization feature; and an interconnect structure in electrical contact with the metallization feature.