公开(公告)号：US10923577B2

公开(公告)日：2021-02-16

申请号：US16241441

申请日：2019-01-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Johnatan A. Kantarovsky ,  Siva P. Adusumilli ,  Vibhor Jain

IPC: H01L29/00 ,  H01L29/51 ,  H01L21/762 ,  H01L49/02 ,  H01L29/161 ,  H01L21/3065 ,  H01L21/02 ,  H01L29/06 ,  H01L21/3105 ,  H01L21/764

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to cavity structures under shallow trench isolation regions and methods of manufacture. The structure includes: one or more cavity structures provided in a substrate material and sealed with an epitaxial material; and a shallow trench isolation region directly above the one or more cavity structures in the substrate material.