公开(公告)号：US20180231957A1

公开(公告)日：2018-08-16

申请号：US15951547

申请日：2018-04-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Cyril CABRAL, JR. ,  Lawrence A. CLEVENGER ,  John M. COHN ,  Jeffrey P. GAMBINO ,  William J. MURPHY ,  Anthony J. TELENSKY

IPC: G05B19/418 ,  H01L21/67

CPC classification number: H01L21/67253 ,  C23C14/546 ,  G01B7/066 ,  G03F7/70916 ,  G03F7/70925 ,  G05B19/418 ,  G05B2219/2602

Abstract: Systems and methods are provided for implementing a crystal oscillator to monitor and control semiconductor fabrication processes. More specifically, a method is provided for that includes performing at least one semiconductor fabrication process on a material of an integrated circuit (IC) disposed within a processing chamber. The method further includes monitoring by at least one electronic oscillator disposed within the processing chamber for the presence or absence of a predetermined substance generated by the at least one semiconductor fabrication process. The method further includes controlling the at least one semiconductor fabrication process based on the presence or absence of the predetermined substance detected by the at least one electronic oscillator.

公开(公告)号：US20170352591A1

公开(公告)日：2017-12-07

申请号：US15653127

申请日：2017-07-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： John H. ZHANG ,  Carl J. RADENS ,  Lawrence A. CLEVENGER

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76897 ,  H01L21/76808 ,  H01L21/76816

Abstract: A method for producing self-aligned line end vias and the resulting device are provided. Embodiments include trench lines formed in a dielectric layer; each trench line including a pair of self aligned line end vias; and a high-density plasma (HDP) oxide, silicon carbide (SiC) or silicon carbon nitride (SiCNH) formed between each pair of self aligned line end vias, wherein the trench lines and self aligned line end vias are filled with a metal liner and metal.