公开(公告)号：US20190267281A1

公开(公告)日：2019-08-29

申请号：US16411775

申请日：2019-05-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hsueh-Chung CHEN ,  Martin J. O'TOOLE ,  Terry A. SPOONER ,  Jason E. STEPHENS

IPC: H01L21/768 ,  H01L23/528 ,  H01L21/033 ,  H01L23/522

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to merged mandrel lines and methods of manufacture. The structure includes: at least one metal line having a first dimension in a self-aligned double patterning (SADP) line array; and at least one metal line having a second dimension inserted into the SADP line array, the second dimension being different than the first dimension.

公开(公告)号：US20190221474A1

公开(公告)日：2019-07-18

申请号：US15872314

申请日：2018-01-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hsueh-Chung CHEN ,  Martin J. O'TOOLE ,  Terry A. SPOONER ,  Jason E. STEPHENS

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L21/033

CPC classification number: H01L21/76816 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/5286 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53257 ,  H01L23/53271

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to merged mandrel lines and methods of manufacture. The structure includes: at least one metal line having a first dimension in a self-aligned double patterning (SADP) line array; and at least one metal line having a second dimension inserted into the SADP line array, the second dimension being different than the first dimension.