公开(公告)号：US09640514B1

公开(公告)日：2017-05-02

申请号：US15084004

申请日：2016-03-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Wei Lin ,  Troy L. Graves-Abe ,  Donald F. Canaperi ,  Spyridon Skordas ,  Matthew T. Shoudy ,  Binglin Miao ,  Raghuveer R. Patlolla ,  Sanjay C. Mehta

IPC: H01L25/065 ,  H01L21/762 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L21/76251 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/29084 ,  H01L2224/29187 ,  H01L2224/32145 ,  H01L2224/83031 ,  H01L2224/83193 ,  H01L2224/832 ,  H01L2224/83896 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01008 ,  H01L2924/01014 ,  H01L2924/0503 ,  H01L2924/05442 ,  H01L2924/059 ,  H01L2924/20109 ,  H01L2924/206 ,  H01L2924/2064

Abstract: A bonding material stack for wafer-to-wafer bonding is provided. The bonding material stack may include a plurality of layers each including boron and nitrogen. In one embodiment, the plurality of layers may include: a first boron oxynitride layer for adhering to a wafer; a boron nitride layer over the first boron oxynitride layer; a second boron oxynitride layer over the boron nitride layer; and a silicon-containing boron oxynitride layer over the second boron oxynitride layer.