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公开(公告)号：US10326420B1
公开(公告)日：2019-06-18
申请号：US15966998
申请日：2018-04-30
Applicant: GLOBALFOUNDRIES INC.
Inventor： Abdellatif Bellaouar , Mehmet Ipek , Frank Zhang
Abstract: We disclose a receiver circuit which may be used in mm-wave devices. The receiver circuit comprises a transimpedance amplifier comprising PMOS and NMOS transistors, wherein the back gate voltages provided to the transistors may be adjusted. By adjusting the back gate voltages during device operation, structural variations and temperature variations in the threshold voltages of the transistors may be minimized and the gain compression tolerance of the receiver circuit may be increased.
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