公开(公告)号：US20180261510A1

公开(公告)日：2018-09-13

申请号：US15432016

申请日：2017-02-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xiaofeng QIU ,  Michael V. AQUILINO ,  Patrick D. CARPENTER ,  Jessica DECHENE ,  Ming Hao TANG ,  Haigou HUANG ,  Huy CAO

IPC: H01L21/8234 ,  H01L23/535 ,  H01L21/308 ,  H01L21/306 ,  H01L21/768 ,  H01L29/423 ,  H01L29/417 ,  H01L27/088

Abstract: A tone inversion method for integrated circuit (IC) fabrication includes providing a substrate with a layer of amorphous carbon over the substrate and a patterning layer over the amorphous carbon layer. The patterning layer is etched to define a first pattern of raised structures and a complementary recessed pattern that is filled with a layer of image reverse material. The first pattern of raised structures is then removed to define a second pattern of structures comprising the image reverse material. A selective etching step is used to transfer the second pattern into a dielectric layer disposed between the layer of amorphous carbon and the substrate.