公开(公告)号：US20180261510A1

公开(公告)日：2018-09-13

申请号：US15432016

申请日：2017-02-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xiaofeng QIU ,  Michael V. AQUILINO ,  Patrick D. CARPENTER ,  Jessica DECHENE ,  Ming Hao TANG ,  Haigou HUANG ,  Huy CAO

IPC: H01L21/8234 ,  H01L23/535 ,  H01L21/308 ,  H01L21/306 ,  H01L21/768 ,  H01L29/423 ,  H01L29/417 ,  H01L27/088

Abstract: A tone inversion method for integrated circuit (IC) fabrication includes providing a substrate with a layer of amorphous carbon over the substrate and a patterning layer over the amorphous carbon layer. The patterning layer is etched to define a first pattern of raised structures and a complementary recessed pattern that is filled with a layer of image reverse material. The first pattern of raised structures is then removed to define a second pattern of structures comprising the image reverse material. A selective etching step is used to transfer the second pattern into a dielectric layer disposed between the layer of amorphous carbon and the substrate.

公开(公告)号：US20170052458A1

公开(公告)日：2017-02-23

申请号：US14831920

申请日：2015-08-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ming Hao TANG

IPC: G03F7/20 ,  G02B5/18 ,  G01N21/47 ,  G02B27/42

CPC classification number: G03F7/70633 ,  G02B27/4255 ,  G02B27/4272

Abstract: A method and apparatus for calculating overlay based on high order diffraction phase measurements are provided. Embodiments include forming a first diffraction pattern in a first layer of a wafer; forming a second diffraction pattern in a second layer of the wafer, the second layer being formed over the first layer; detecting a first or a higher odd order signal in an X and a Y direction from each of the first and second diffraction patterns; calculating a peak for each signal; measuring a delta value between peaks of the signals in the X direction and a delta value between peaks of the signals in the Y direction; and calculating an overlay between the first and second layers based on the delta values.

Abstract translation: 提供了一种基于高阶衍射相位测量来计算叠加的方法和装置。 实施例包括在晶片的第一层中形成第一衍射图案; 在所述晶片的第二层中形成第二衍射图案，所述第二层形成在所述第一层上; 从所述第一和第二衍射图案中的每一个检测X和Y方向上的第一或更高的奇数阶信号; 计算每个信号的峰值; 测量X方向信号的峰值与Y方向信号的峰值之间的增量值; 以及基于所述增量值计算所述第一和第二层之间的覆盖。