-
公开(公告)号:US10325824B2
公开(公告)日:2019-06-18
申请号:US15622061
申请日:2017-06-13
Applicant: GLOBALFOUNDRIES INC.
Inventor: Mitsuhiro Togo , Ram Asra , Xing Zhang , Palanivel Balasubramaniam
IPC: H01L21/66 , H01L21/8238 , H01L27/092 , H01L29/10 , H01L29/423
Abstract: At least one method, apparatus and system are disclosed for controlling threshold voltage values for a plurality of transistor devices. Determine a first threshold voltage of a first transistor gate comprising a first gate channel having a first length. Determine a second length of a second gate channel of a second transistor gate. Determining a process adjustment of the second gate based on the second length for providing a second threshold voltage of the second transistor gate. The second threshold voltage is within a predetermined range of the first threshold voltage. Provide data relating to process adjustment to a process controller for performing the process adjustment.
-
公开(公告)号:US20180358272A1
公开(公告)日:2018-12-13
申请号:US15622061
申请日:2017-06-13
Applicant: GLOBALFOUNDRIES INC.
Inventor: Mitsuhiro Togo , Ram Asra , Xing Zhang , Palanivel Balasubramaniam
IPC: H01L21/66 , H01L21/8238 , H01L27/092 , H01L29/10 , H01L29/423
CPC classification number: H01L22/20 , H01L21/823807 , H01L21/823821 , H01L21/82385 , H01L27/0922 , H01L27/0924 , H01L29/1037 , H01L29/42376
Abstract: At least one method, apparatus and system are disclosed for controlling threshold voltage values for a plurality of transistor devices. Determine a first threshold voltage of a first transistor gate comprising a first gate channel having a first length. Determine a second length of a second gate channel of a second transistor gate. Determining a process adjustment of the second gate based on the second length for providing a second threshold voltage of the second transistor gate. The second threshold voltage is within a predetermined range of the first threshold voltage. Provide data relating to process adjustment to a process controller for performing the process adjustment.
-