公开(公告)号：US20170221887A1

公开(公告)日：2017-08-03

申请号：US15013393

申请日：2016-02-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ramana Malladi ,  Renata Camillo-Castillo

IPC: H01L27/082 ,  H01L29/737 ,  H01L23/66 ,  H01L29/161 ,  H01L29/165 ,  H01L21/8228 ,  H01L29/66

CPC classification number: H01L27/0826 ,  H01L21/82285 ,  H01L23/66 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0813 ,  H01L29/0817 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7371 ,  H01L29/7378

Abstract: Device structures and fabrication methods for a device structure. One or more trench isolation regions are formed in a substrate to surround a device region. A base layer is formed on the device region. First and second emitter fingers are formed on the base layer. A portion of the device region extending from the first emitter finger to the second emitter finger is free of dielectric material.

公开(公告)号：US09812447B2

公开(公告)日：2017-11-07

申请号：US15013393

申请日：2016-02-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ramana Malladi ,  Renata Camillo-Castillo

IPC: H01L29/737 ,  H01L27/082 ,  H01L21/8228 ,  H01L29/66 ,  H01L29/161 ,  H01L29/165 ,  H01L23/66

CPC classification number: H01L27/0826 ,  H01L21/82285 ,  H01L23/66 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0813 ,  H01L29/0817 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7371 ,  H01L29/7378

Abstract: Device structures and fabrication methods for a device structure. One or more trench isolation regions are formed in a substrate to surround a device region. A base layer is formed on the device region. First and second emitter fingers are formed on the base layer. A portion of the device region extending from the first emitter finger to the second emitter finger is free of dielectric material.