公开(公告)号：US09236287B2

公开(公告)日：2016-01-12

申请号：US13667389

申请日：2012-11-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Solomon Assefa ,  William M. Green ,  Marwan H. Khater ,  Yurii A. Vlasov

IPC: H01L21/762

CPC classification number: H01L21/76205 ,  H01L21/0274 ,  H01L21/76232 ,  H01L21/76281 ,  H01L21/76283

Abstract: Photonic SOI devices are formed by lateral epitaxy of a deposited non-crystalline semiconductor layer over a localized buried oxide created by a trench isolation process or by thermal oxidation. Specifically, and after forming a trench into a semiconductor substrate, the trench can be filled with an oxide by a deposition process or a thermal oxidation can be performed to form a localized buried oxide within the semiconductor substrate. In some embodiments, the oxide can be recessed to expose sidewall surfaces of the semiconductor substrate. Next, a non-crystalline semiconductor layer is formed and then a solid state crystallization is preformed which forms a localized semiconductor-on-insulator layer. During the solid state crystallization process portions of the non-crystalline semiconductor layer that are adjacent exposed sidewall surfaces of the substrate are crystallized.

Abstract translation: 通过在通过沟槽隔离工艺或通过热氧化产生的局部掩埋氧化物上沉积的非晶体半导体层的横向外延形成光子学SOI器件。 具体地说，并且在将半导体衬底形成沟槽之后，可以通过沉积工艺填充沟槽，或者可以进行热氧化以在半导体衬底内形成局部掩埋氧化物。 在一些实施例中，氧化物可以凹入以暴露半导体衬底的侧壁表面。 接下来，形成非晶半导体层，然后进行形成局部绝缘体上半导体层的固态结晶。 在固态结晶处理期间，非晶半导体层的与衬底的暴露的侧壁表面相邻的部分结晶。