公开(公告)号：US20170288016A1

公开(公告)日：2017-10-05

申请号：US15627973

申请日：2017-06-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hoong Shing WONG ,  Min-hwa CHI ,  Tae-Hoon KIM

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0653 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: A FinFET has shaped epitaxial structures for the source and drain that are electrically isolated from the substrate. Shaped epitaxial structures in the active region are separated from the substrate in the source and drain regions while those in the channel region remain. The gaps created by the separation in the source and drain are filled with electrically insulating material. Prior to filling the gaps, defects created by the separation may be reduced.