公开(公告)号：US08951900B2

公开(公告)日：2015-02-10

申请号：US13870661

申请日：2013-04-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Axel Preusse ,  Norbert Schroeder ,  Uwe Stoeckgen

IPC: H01L21/20 ,  H01L21/4763 ,  H01L21/44 ,  H01L21/768

CPC classification number: H01L21/7684 ,  H01L21/76819 ,  H01L21/76879

Abstract: The present disclosure is directed to, among other things, an illustrative method that includes forming an opening in a dielectric material of a contact level of a semiconductor device, and selectively depositing a conductive material in the opening to form a contact element therein, the contact element extending to a contact area of a circuit element and having a laterally restricted excess portion formed outside of the opening and above the dielectric material. The disclosed method further includes forming a sacrificial material layer above the dielectric material and the contact element, the sacrificial material layer surrounding the laterally restricted excess portion. Additionally, the method includes planarizing a surface topography of the contact level in the presence of the sacrificial material so as to remove the laterally restricted excess portion from above the dielectric material.

Abstract translation: 本公开尤其涉及一种说明性方法，其包括在半导体器件的接触电平的电介质材料中形成开口，并且在开口中选择性地沉积导电材料以在其中形成接触元件，所述触点 元件延伸到电路元件的接触区域，并且具有形成在开口外部和电介质材料之上的横向受限的多余部分。 所公开的方法还包括在电介质材料和接触元件之上形成牺牲材料层，牺牲材料层围绕横向限制的多余部分。 另外，该方法包括在存在牺牲材料的情况下对接触层的表面形貌进行平面化，从而从电介质材料上方去除侧向限制的多余部分。

公开(公告)号：US20130237057A1

公开(公告)日：2013-09-12

申请号：US13870661

申请日：2013-04-25

Applicant: GLOBALFOUNDRIES INC.

Inventor： Axel Preusse ,  Norbert Schroeder ,  Uwe Stoeckgen

IPC: H01L21/768

CPC classification number: H01L21/7684 ,  H01L21/76819 ,  H01L21/76879

Abstract: The present disclosure is directed to, among other things, an illustrative method that includes forming an opening in a dielectric material of a contact level of a semiconductor device, and selectively depositing a conductive material in the opening to form a contact element therein, the contact element extending to a contact area of a circuit element and having a laterally restricted excess portion formed outside of the opening and above the dielectric material. The disclosed method further includes forming a sacrificial material layer above the dielectric material and the contact element, the sacrificial material layer surrounding the laterally restricted excess portion. Additionally, the method includes planarizing a surface topography of the contact level in the presence of the sacrificial material so as to remove the laterally restricted excess portion from above the dielectric material.

Abstract translation: 本公开尤其涉及一种说明性方法，其包括在半导体器件的接触电平的电介质材料中形成开口，并且在开口中选择性地沉积导电材料以在其中形成接触元件，所述触点 元件延伸到电路元件的接触区域，并且具有形成在开口外部和电介质材料之上的横向受限的多余部分。 所公开的方法还包括在电介质材料和接触元件之上形成牺牲材料层，牺牲材料层围绕横向限制的多余部分。 另外，该方法包括在存在牺牲材料的情况下对接触层的表面形貌进行平面化，从而从电介质材料上方去除侧向限制的多余部分。