公开(公告)号：US20160071791A1

公开(公告)日：2016-03-10

申请号：US14480718

申请日：2014-09-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： Elbert E. Huang ,  David L. Rath ,  Wei-tsu Tseng

IPC: H01L23/528 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/321 ,  H01L27/088 ,  H01L23/532

CPC classification number: H01L21/32133 ,  H01L21/76847 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/823475 ,  H01L23/522 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/0886

Abstract: A set of trenches can be formed in a thin film dielectric layer located on a substrate. The set of trenches can be filled with a predominantly tungsten layer that electrically connects circuit components located on the substrate. The tungsten layer can be recessed below an upper surface of the thin film dielectric layer, while maintaining electrical connection between the circuit components located on the substrate. A liner can be formed over the tungsten layer in the trenches. A metal layer that is predominantly made from a metal other than tungsten, can be formed over the liner.

Abstract translation: 一组沟槽可以形成在位于衬底上的薄膜电介质层中。 该组沟槽可以填充主要是钨层，其电连接位于衬底上的电路元件。 钨层可以在薄膜电介质层的上表面下方凹入，同时保持位于基板上的电路元件之间的电连接。 可以在沟槽中的钨层上形成衬垫。 主要由钨以外的金属制成的金属层可以形成在衬套上。