公开(公告)号：US10388567B2

公开(公告)日：2019-08-20

申请号：US15724493

申请日：2017-10-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Fen Chen ,  Mukta G. Farooq ,  Carole D. Graas ,  Xiao Hu Liu

IPC: H01L21/768 ,  H01L23/48

Abstract: Stress generation free thru-silicon-via structures with improved performance and reliability and methods of manufacture are provided. The method includes forming a first conductive diffusion barrier liner on an insulator layer within a thru-silicon-via of a wafer material. The method further includes forming a stress absorption layer on the first conductive diffusion barrier. The method further includes forming a second conductive diffusion barrier on the stress absorption layer. The method further includes forming a copper plate on the second conductive diffusion barrier.