公开(公告)号：US09461149B2

公开(公告)日：2016-10-04

申请号：US14484916

申请日：2014-09-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hongmei Li ,  Junjun Li ,  Xiaoping Liang ,  Kai Zhao

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/785 ,  H01L29/78696

Abstract: Methods to fabricate a stacked nanowire field effect transistor (FET) with reduced gate resistance are provided. The nanowire stack in the stacked nanowire FET can be provided by first forming a material stack of alternating sacrificial material layers and nanowire material layer. The sacrificial material layers and selected nanowire material layers in the material stack are subsequently removed to increase a vertical distance between two active nanowire material layers.

Abstract translation: 提供了制造具有降低的栅极电阻的堆叠的纳米线场效应晶体管（FET）的方法。 可以通过首先形成交替的牺牲材料层和纳米线材料层的材料堆叠来提供堆叠的纳米线FET中的纳米线堆叠。 随后去除材料堆叠中的牺牲材料层和选定的纳米线材料层以增加两个活性纳米线材料层之间的垂直距离。