公开(公告)号：US09647063B2

公开(公告)日：2017-05-09

申请号：US14797945

申请日：2015-07-13

申请人： GLOBALFOUNDRIES INC. ,  King Abdulaziz City for Science and Technology

发明人： Maha M. Khayyat ,  Devendra K. Sadana ,  Brent A. Wacaser

IPC分类号： H01L29/20 ,  H01L29/06 ,  H01L21/20 ,  H01L21/30 ,  H01L29/66 ,  H01L29/02

CPC分类号： H01L29/0676 ,  H01L21/20 ,  H01L21/30 ,  H01L29/02 ,  H01L29/20 ,  H01L29/66

摘要： A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.

公开(公告)号：US20150318352A1

公开(公告)日：2015-11-05

申请号：US14797945

申请日：2015-07-13

申请人： International Business Machines Corporation ,  King Abdulaziz City for Science and Technology

发明人： Maha M. Khayyat ,  Devendra K. Sadana ,  Brent A. Wacaser

IPC分类号： H01L29/06 ,  H01L29/20

CPC分类号： H01L29/0676 ,  H01L21/20 ,  H01L21/30 ,  H01L29/02 ,  H01L29/20 ,  H01L29/66

摘要： A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.

摘要翻译： 提供了一种在用于半导体器件应用的半导体衬底的表面上制造模板化半导体纳米线的方法。 该方法包括通过使用氧反应种子材料来控制半导体纳米线的空间位置。 本发明还提供包括半导体纳米线的半导体结构。 在又一个实施例中，提供了在随后的退火步骤期间能够与氧反应元件形成化合物半导体合金的化合物半导体衬底或其它类似衬底的图案化。 该实施例提供可用于各种应用的图案化衬底，包括例如半导体器件制造，光电器件制造和太阳能电池器件制造。