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公开(公告)号：US09647063B2
公开(公告)日：2017-05-09
申请号：US14797945
申请日：2015-07-13
摘要： A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.
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公开(公告)号：US20160163553A1
公开(公告)日：2016-06-09
申请号：US15046134
申请日：2016-02-17
发明人： Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Katherine L. Saenger , Ibrahim Alhomoudi
IPC分类号： H01L21/304 , H01L21/285
CPC分类号： H01L21/304 , B26F3/00 , C30B33/00 , C30B33/06 , H01L21/2855 , H01L21/32051 , H01L21/321 , H01L31/1892 , Y02E10/50 , Y10T225/10
摘要： Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling.
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公开(公告)号：US09324564B2
公开(公告)日：2016-04-26
申请号：US14797990
申请日：2015-07-13
发明人： Ibrahim Alhomoudi , Stephen W. Bedell , Cheng-Wei Cheng , Keith E. Fogel , Devendra K. Sadana , Katherine L. Saenger , Norma E. Sosa , Ning Li
IPC分类号： H01L21/268 , H01L21/311 , H01L21/683 , H01L21/3213 , B23K26/06 , B23K26/36 , B23K26/40
CPC分类号： H01L21/268 , B23K26/0624 , B23K26/364 , B23K26/40 , B23K2103/50 , H01L21/31127 , H01L21/32131 , H01L21/6835 , H01L2221/68327
摘要： Laser ablation can be used to form a trench within at least a blanket layer of a stressor layer that is atop a base substrate. A non-ablated portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can also be used to form a trench within a blanket material stack including at least a plating seed layer. A stressor layer is formed on the non-ablated portions of the material stack and one portion of the stressor layer has an edge that defines the edge of the material layer region to be spalled. Laser ablation can be further used to form a trench that extends through a blanket stressor layer and into the base substrate itself. The trench has an edge that defines the edge of the material layer region to be spalled.
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公开(公告)号：US20170148635A1
公开(公告)日：2017-05-25
申请号：US15423130
申请日：2017-02-02
发明人： Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Katherine L. Saenger , Ibrahim Alhomoudi
IPC分类号： H01L21/304 , C30B33/00 , B26F3/00
CPC分类号： H01L21/304 , B26F3/00 , C30B33/00 , C30B33/06 , H01L21/2855 , H01L21/32051 , H01L21/321 , H01L31/1892 , Y02E10/50 , Y10T225/10
摘要： Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling.
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公开(公告)号：US09578736B2
公开(公告)日：2017-02-21
申请号：US14581445
申请日：2014-12-23
发明人： Turki bin Saud bin Mohammed Al-Saud , Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Devendra K. Sadana
CPC分类号： H05K1/028 , H01L21/304 , H01L31/046 , H01L31/0465 , H01L31/1892 , H01L31/1896 , H05K1/0271 , H05K1/09 , H05K1/092 , H05K1/11 , H05K1/111 , Y02E10/50
摘要： A handle substrate having at least one metallization region is provided on a stressor layer that is located above a base substrate such that the at least one metallization region is in contact with a surface of the stressor layer. An upper portion of the base substrate is spalled, i.e., removed, to provide a structure comprising, from bottom to top, a spalled material portion of the base substrate, the stressor layer and the handle substrate containing the at least one metallization region in contact with the surface of the stressor layer.
摘要翻译： 具有至少一个金属化区域的手柄基板设置在位于基底基板上方的应力层上，使得至少一个金属化区域与应力层的表面接触。 基底衬底的上部被剥离，即被去除，以提供从底部到顶部包括基底衬底的剥落材料部分，应力层和手柄衬底的结构，其包含接触的至少一个金属化区域 与应力层的表面。
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公开(公告)号：US20160183362A1
公开(公告)日：2016-06-23
申请号：US14877359
申请日：2015-10-07
发明人： Turki bin Saud bin Mohammed Al-Saud , Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Devendra K. Sadana
IPC分类号： H05K1/02
CPC分类号： H05K1/028 , H01L21/304 , H01L31/046 , H01L31/0465 , H01L31/1892 , H01L31/1896 , H05K1/0271 , H05K1/09 , H05K1/092 , H05K1/11 , H05K1/111 , Y02E10/50
摘要： A handle substrate having at least one metallization region is provided on a stressor layer that is located above a base substrate such that the at least one metallization region is in contact with a surface of the stressor layer. An upper portion of the base substrate is spalled, i.e., removed, to provide a structure comprising, from bottom to top, a spalled material portion of the base substrate, the stressor layer and the handle substrate containing the at least one metallization region in contact with the surface of the stressor layer.
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公开(公告)号：US11145769B2
公开(公告)日：2021-10-12
申请号：US16661413
申请日：2019-10-23
IPC分类号： H01L31/0224 , H01L31/0747 , H01L31/18
摘要： A method for forming a photovoltaic device includes forming a doped layer on a crystalline substrate, the doped layer having an opposite dopant conductivity as the substrate. A non-crystalline transparent conductive electrode (TCE) layer is formed on the doped layer at a temperature less than 150 degrees Celsius. The TCE layer is flash annealed to crystallize material of the TCE layer at a temperature above about 150 degrees Celsius for less than 10 seconds.
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公开(公告)号：US09918382B2
公开(公告)日：2018-03-13
申请号：US15646881
申请日：2017-07-11
发明人： Turki bin Saud bin Mohammed Al-Saud , Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Devendra K. Sadana
CPC分类号： H05K1/028 , H01L21/304 , H01L31/046 , H01L31/0465 , H01L31/1892 , H01L31/1896 , H05K1/0271 , H05K1/09 , H05K1/092 , H05K1/11 , H05K1/111 , Y02E10/50
摘要： A handle substrate having at least one metallization region is provided on a stressor layer that is located above a base substrate such that the at least one metallization region is in contact with a surface of the stressor layer. An upper portion of the base substrate is spalled, i.e., removed, to provide a structure comprising, from bottom to top, a spalled material portion of the base substrate, the stressor layer and the handle substrate containing the at least one metallization region in contact with the surface of the stressor layer.
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公开(公告)号：US20150318352A1
公开(公告)日：2015-11-05
申请号：US14797945
申请日：2015-07-13
摘要： A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.
摘要翻译： 提供了一种在用于半导体器件应用的半导体衬底的表面上制造模板化半导体纳米线的方法。 该方法包括通过使用氧反应种子材料来控制半导体纳米线的空间位置。 本发明还提供包括半导体纳米线的半导体结构。 在又一个实施例中，提供了在随后的退火步骤期间能够与氧反应元件形成化合物半导体合金的化合物半导体衬底或其它类似衬底的图案化。 该实施例提供可用于各种应用的图案化衬底，包括例如半导体器件制造，光电器件制造和太阳能电池器件制造。
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公开(公告)号：US20150140830A1
公开(公告)日：2015-05-21
申请号：US14566804
申请日：2014-12-11
发明人： Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Ning Li , Devendra K. Sadana , Katherine L. Saenger , Ibrahim Alhomoudi
IPC分类号： H01L21/304 , H01L21/3205 , H01L21/321
CPC分类号： H01L21/304 , B26F3/00 , C30B33/00 , C30B33/06 , H01L21/2855 , H01L21/32051 , H01L21/321 , H01L31/1892 , Y02E10/50 , Y10T225/10
摘要： Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling.
摘要翻译： 利用剥落的材料层从基底基板上去除材料层的方法，其中在剥离期间模式III应力即垂直于在基底基板中产生的断裂面的应力减小。 在剥落过程中模式III应力的显着降低导致剥落过程，其中剥离材料在其一个边缘处具有较小的表面粗糙度，与现有技术的剥离过程相比，其中存在模式III应力并与剥落相竞争。
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