公开(公告)号：US10916470B2

公开(公告)日：2021-02-09

申请号：US16290178

申请日：2019-03-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Vimal K. Kamineni ,  Ruilong Xie ,  Kangguo Cheng ,  Adra V. Carr

IPC: H01L21/00 ,  H01L21/768 ,  H01L23/532 ,  H01L21/8234 ,  H01L29/78

Abstract: Structures that include a field effect-transistor and methods of forming a structure that includes a field-effect transistor. A first field-effect transistor includes a first source/drain region, and a second field-effect transistor includes a second source/drain region. A first contact is arranged over the first source/drain region, and a second contact is arranged over the second source/drain region. A portion of a dielectric layer, which is composed of a low-k dielectric material, is laterally arranged between the first contact and the second contact.

公开(公告)号：US20200279768A1

公开(公告)日：2020-09-03

申请号：US16290178

申请日：2019-03-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Vimal K. Kamineni ,  Ruilong Xie ,  Kangguo Cheng ,  Adra V. Carr

IPC: H01L21/768 ,  H01L23/532

Abstract: Structures that include a field effect-transistor and methods of forming a structure that includes a field-effect transistor. A first field-effect transistor includes a first source/drain region, and a second field-effect transistor includes a second source/drain region. A first contact is arranged over the first source/drain region, and a second contact is arranged over the second source/drain region. A portion of a dielectric layer, which is composed of a low-k dielectric material, is laterally arranged between the first contact and the second contact.