公开(公告)号：US08742513B2

公开(公告)日：2014-06-03

申请号：US13628468

申请日：2012-09-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Andy Wei ,  Andrew Waite

IPC: H01L27/11

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823842 ,  H01L27/0629 ,  H01L28/20

Abstract: In a semiconductor device comprising sophisticated high-k metal gate structures formed in accordance with a replacement gate approach, semiconductor-based resistors may be formed above isolation structures substantially without being influenced by the replacement gate approach. Consequently, enhanced area efficiency may be achieved compared to conventional strategies, in which the resistive structures may have to be provided on the basis of a gate electrode metal, while, nevertheless, a low parasitic capacitance may be accomplished due to providing the resistive structures above the isolation structure.

Abstract translation: 在包括根据替换栅极方法形成的复杂的高k金属栅极结构的半导体器件中，半导体基电阻器可以基本上不受更换栅极方法的影响而形成在隔离结构之上。 因此，与常规策略相比，可以实现增强的面积效率，其中电阻结构可能必须基于栅电极金属提供，而尽管如此，可以通过提供上述电阻结构来实现低寄生电容 隔离结构。

公开(公告)号：US20130026581A1

公开(公告)日：2013-01-31

申请号：US13628468

申请日：2012-09-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Andy Wei ,  Andrew Waite

IPC: H01L27/06

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823842 ,  H01L27/0629 ,  H01L28/20

Abstract: In a semiconductor device comprising sophisticated high-k metal gate structures formed in accordance with a replacement gate approach, semiconductor-based resistors may be formed above isolation structures substantially without being influenced by the replacement gate approach. Consequently, enhanced area efficiency may be achieved compared to conventional strategies, in which the resistive structures may have to be provided on the basis of a gate electrode metal, while, nevertheless, a low parasitic capacitance may be accomplished due to providing the resistive structures above the isolation structure.

Abstract translation: 在包括根据替换栅极方法形成的复杂的高k金属栅极结构的半导体器件中，半导体基电阻器可以基本上不受更换栅极方法的影响而形成在隔离结构之上。 因此，与常规策略相比，可以实现增强的面积效率，其中电阻结构可能必须基于栅电极金属提供，而尽管如此，可以通过提供上述电阻结构来实现低寄生电容 隔离结构。