公开(公告)号：US10523206B2

公开(公告)日：2019-12-31

申请号：US15922516

申请日：2018-03-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kong Boon Yeap ,  Yang Liu ,  Tian Shen ,  Anjum Mehta

IPC: H01L27/02 ,  H01L27/092 ,  H03K19/0948 ,  H03K3/356 ,  H03K19/00 ,  H01L29/786 ,  H01L21/84 ,  H01L21/8238 ,  H01L27/12 ,  H03K19/0185 ,  H01L27/11

Abstract: One illustrative method disclosed herein includes forming a first transistor for an inverter and forming asymmetrically spaced first and second conductive contact structures that are conductively coupled to the source region and the drain region, respectively, of the transistor. In this example, the first conductive contact structure (for the source region) is positioned a first predetermined target distance from a first side of the gate structure of the transistor, and the second conductive contact structure (for the drain region) is positioned a second predetermined target distance from a second side of the gate structure, wherein the second predetermined target distance is less than the first predetermined target distance.

公开(公告)号：US20190288690A1

公开(公告)日：2019-09-19

申请号：US15922516

申请日：2018-03-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kong Boon Yeap ,  Yang Liu ,  Tian Shen ,  Anjum Mehta

IPC: H03K19/0948 ,  H03K3/356 ,  H03K19/00 ,  H03K19/0185 ,  H01L21/84 ,  H01L21/8238 ,  H01L27/12 ,  H01L29/786

Abstract: One illustrative method disclosed herein includes forming a first transistor for an inverter and forming asymmetrically spaced first and second conductive contact structures that are conductively coupled to the source region and the drain region, respectively, of the transistor. In this example, the first conductive contact structure (for the source region) is positioned a first predetermined target distance from a first side of the gate structure of the transistor, and the second conductive contact structure (for the drain region) is positioned a second predetermined target distance from a second side of the gate structure, wherein the second predetermined target distance is less than the first predetermined target distance.