公开(公告)号：US20150340229A1

公开(公告)日：2015-11-26

申请号：US14282094

申请日：2014-05-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Neeraj TRIPATHI ,  Christopher Michael PRINDLE

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L21/02494 ,  H01L21/02658 ,  H01L29/0847 ,  H01L29/66636 ,  H01L29/78

Abstract: Field-effect transistors (FETs) and methods of fabricating field-effect transistors are provided, with one or both of a source cavity or a drain cavity having different channel junction characteristics. The methods include, for instance, recessing a semiconductor material to form a cavity adjacent to a channel region of the transistor, the recessing defining a bottom channel interface surface and a sidewall channel interface surface within the cavity; providing a protective liner over the sidewall channel interface surface, with the bottom channel interface surface being exposed within the cavity; processing the bottom channel interface surface to facilitate forming a first channel junction of the transistor; and removing the protective liner from over the sidewall channel interface surface, and subsequently processing the sidewall channel interface surface to form a second channel junction of the transistor, where the first and second channel junctions have different channel junction characteristics.

Abstract translation: 提供场效应晶体管（FET）和制造场效应晶体管的方法，其中源腔或漏腔中的一个或两个具有不同的沟道结特征。 所述方法包括例如使半导体材料凹陷以形成与晶体管的沟道区相邻的空腔，所述凹陷限定所述空腔内的底部沟道界面表面和侧壁通道界面表面; 在所述侧壁通道界面表面上提供保护衬垫，所述底部通道界面表面暴露在所述空腔内; 处理底部通道界面以便于形成晶体管的第一通道结; 以及从所述侧壁通道界面表面上移除所述保护性衬垫，以及随后处理所述侧壁通道界面以形成所述晶体管的第二通道结，其中所述第一和第二通道结具有不同的通道结特性。