公开(公告)号：US08871651B1

公开(公告)日：2014-10-28

申请号：US13940535

申请日：2013-07-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Dae Han Choi ,  Zhuangfei Chen ,  Fangyu Wu

IPC: H01L21/302

CPC classification number: H01L21/3086 ,  H01L29/66795

Abstract: A mask for use in fabricating one or more semiconductor devices is fabricated by: providing sacrificial spacing structures disposed over a substrate structure, and including protective hard masks at upper surfaces of the spacing structures; disposing a sidewall spacer layer conformally over the sacrificial spacing structures; selectively removing the sidewall spacer layer from above the sacrificial spacing structures to expose the protective hard masks of the spacing structures, the selectively removing including leaving sidewall spacers along sidewalls of the sacrificial spacing structures; providing a protective material over the substrate structure; and removing the exposed protective hard masks from the sacrificial spacing structures, and thereafter, removing remaining sacrificial spacing structures and the protective material, leaving the sidewall spacers over the substrate structure as a mask.

Abstract translation: 通过以下方式制造用于制造一个或多个半导体器件的掩模：提供设置在衬底结构上的牺牲间隔结构，并且在间隔结构的上表面处包括保护性硬掩模; 将侧壁间隔层保形地设置在牺牲间隔结构上; 从所述牺牲间隔结构的上方选择性地去除所述侧壁间隔层，以露出所述间隔结构的保护性硬掩模，所述选择性地移除包括沿着所述牺牲间隔结构的侧壁留下侧壁间隔物; 在衬底结构上提供保护材料; 并且从牺牲间隔结构中去除暴露的保护性硬掩模，然后去除剩余的牺牲间隔结构和保护材料，将侧壁间隔物留在衬底结构上作为掩模。