Methods and structures for mitigating ESD during wafer bonding

    公开(公告)号:US10236263B1

    公开(公告)日:2019-03-19

    申请号:US15685564

    申请日:2017-08-24

    Abstract: One method includes positioning a front side of a first substrate opposite a side of a second substrate, the first substrate comprising an ESD mitigation structure located at an approximate center of the front side, the second substrate comprising at least one TSV structure that extends through the side of the second substrate, the first substrate and the second substrates adapted to be positioned so as to result in the conductive coupling of the at least one TSV structure and the ESD mitigation structure, bending the first substrate to an initial contact position such that an initial engagement between the first substrate and the second substrate will result in conductively coupling between the ESD mitigation structure and the TSV structure, and engaging the first and second substrates with one another such that the ESD mitigation structure and the TSV structure are conductively coupled to one another.

    METHODS AND STRUCTURES FOR MITIGATING ESD DURING WAFER BONDING

    公开(公告)号:US20190067217A1

    公开(公告)日:2019-02-28

    申请号:US15685564

    申请日:2017-08-24

    Abstract: One method includes positioning a front side of a first substrate opposite a side of a second substrate, the first substrate comprising an ESD mitigation structure located at an approximate center of the front side, the second substrate comprising at least one TSV structure that extends through the side of the second substrate, the first substrate and the second substrates adapted to be positioned so as to result in the conductive coupling of the at least one TSV structure and the ESD mitigation structure, bending the first substrate to an initial contact position such that an initial engagement between the first substrate and the second substrate will result in conductively coupling between the ESD mitigation structure and the TSV structure, and engaging the first and second substrates with one another such that the ESD mitigation structure and the TSV structure are conductively coupled to one another.

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