公开(公告)号：US20150344293A1

公开(公告)日：2015-12-03

申请号：US14821997

申请日：2015-08-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： David L. HARAME ,  Anthony K. STAMPER

IPC: B81B3/00

CPC classification number: B81B3/0027 ,  B81B2201/0285 ,  H01L21/84 ,  H01L27/1203 ,  H01L41/1136 ,  H01L2224/73265 ,  H03H3/02 ,  H03H9/1007 ,  H03H9/173 ,  H03H2001/0064 ,  H03H2003/027 ,  H03H2009/155 ,  H03H2009/241

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.

Abstract translation: 提供了与CMOS器件集成的体声波滤波器和/或体声波谐振器，制造方法和设计结构。 该方法包括从绝缘体上的硅层形成单晶束。 该方法还包括在单晶束上提供绝缘体材料涂层。 该方法还包括通过暴露出绝缘体下方的晶片的绝缘体材料形成通孔。 绝缘体材料保留在单晶束上。 该方法还包括在通孔和绝缘体材料上提供牺牲材料。 该方法还包括在牺牲材料上提供盖子。 该方法进一步包括通过盖子排出牺牲材料和在单一结晶束下方的晶片的一部分，以在单晶束之下形成单结晶束上方的上腔和晶片中的下腔。