公开(公告)号：US11695384B2

公开(公告)日：2023-07-04

申请号：US17884888

申请日：2022-08-10

Applicant: Qorvo Biotechnologies, LLC

Inventor： Matthew Ryder ,  Rio Rivas ,  Thayne Edwards

IPC: H03H9/02 ,  G01N29/02 ,  G01N29/036 ,  G01N33/536 ,  H03H3/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/15

CPC classification number: H03H9/02015 ,  G01N29/022 ,  G01N29/036 ,  G01N33/536 ,  H03H3/02 ,  H03H9/131 ,  H03H9/175 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0426 ,  H03H2003/027 ,  H03H2009/155

Abstract: A micro-electrical-mechanical system (MEMS) resonator device includes at least one functionalization material arranged over at least a central portion, but less than an entirety, of a top side electrode. For an active region exhibiting greatest sensitivity at a center point and reduced sensitivity along its periphery, omitting functionalization material over at least one peripheral portion of a resonator active region prevents analyte binding in regions of lowest sensitivity. The at least one functionalization material extends a maximum length in a range of from about 20% to about 95% of an active area length and extends a maximum width in a range of from about 50% to 100% of an active area width. Methods for fabricating MEMS resonator devices are also provided.

公开(公告)号：US11658612B2

公开(公告)日：2023-05-23

申请号：US17248411

申请日：2021-01-24

Applicant: MUMEC, INC.

Inventor： Thura Lin Naing ,  Tristan Orion Rocheleau

IPC: H03B5/32 ,  H03B5/30 ,  H04L27/12 ,  H03D11/08 ,  H03H9/24 ,  H04B1/16 ,  H04W64/00 ,  H03H9/02 ,  H03B5/12 ,  H03D11/04 ,  H03H3/02

CPC classification number: H03B5/32 ,  H03B5/1215 ,  H03B5/30 ,  H03B5/323 ,  H03D11/04 ,  H03D11/08 ,  H03H9/02259 ,  H03H9/02393 ,  H03H9/2447 ,  H03H9/2457 ,  H04B1/16 ,  H04L27/127 ,  H04W64/006 ,  H03D2200/0074 ,  H03H3/02 ,  H03H9/02228 ,  H03H2003/027

Abstract: The present disclosure provides a super-regenerative transceiver with a feedback element having a controllable gain. The super-regenerative transceiver utilizes the controllable gain to improve RF signal data sensitivity and improve RF signal data capture rates. Super-regenerative transceivers described herein permit signal data capture over a broad range of frequencies and for a range of communication protocols. Super-regenerative transceivers described herein are tunable, consume very little power for operation and maintenance, and permit long term operation even when powered by very small power sources (e.g., coin batteries).

公开(公告)号：US20180358948A1

公开(公告)日：2018-12-13

申请号：US15434829

申请日：2017-02-16

Applicant: The Board of Trustees of the University of Illinois

Inventor： Songbin Gong ,  Yong-Ha Song

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/56 ,  H03H3/02

CPC classification number: H03H9/02086 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/02157 ,  H03H9/02228 ,  H03H9/02259 ,  H03H9/02992 ,  H03H9/171 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/021 ,  H03H2003/027

Abstract: A micro-resonator includes a first electrode positioned on a piezoelectric plate at a first end of the piezoelectric plate, the first electrode including a first set of fingers and a second electrode positioned on the piezoelectric plate at a second end of the piezoelectric plate. The second electrode including a second set of fingers interdigitated with the first set of fingers with an overlapping distance without touching the first set of fingers, the overlapping distance being less than seven-tenths the length of one of the first set of fingers or the second set of fingers. At least one of the first end or the second end of the piezoelectric plate may define a curved shape.

公开(公告)号：US20170366154A1

公开(公告)日：2017-12-21

申请号：US15691272

申请日：2017-08-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

IPC: H03H3/007 ,  H03H9/56 ,  G06F17/50 ,  H03H3/02 ,  H03H9/02 ,  H03H9/24 ,  H03H9/10 ,  H03H9/64 ,  H03H9/54 ,  H03H3/08 ,  H03H9/15

CPC classification number: H03H3/007 ,  G06F17/5063 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/02992 ,  H03H9/1071 ,  H03H9/2447 ,  H03H9/2452 ,  H03H9/2457 ,  H03H9/2463 ,  H03H9/54 ,  H03H9/56 ,  H03H9/64 ,  H03H2003/022 ,  H03H2003/023 ,  H03H2003/027 ,  H03H2009/155 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

公开(公告)号：US09831848B2

公开(公告)日：2017-11-28

申请号：US15212489

申请日：2016-07-18

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Munehisa Watanabe ,  Hideki Iwamoto ,  Hajime Kando ,  Syunsuke Kido

IPC: H01L41/047 ,  H03H9/02 ,  H03H3/02 ,  H03H3/04 ,  H03H3/08 ,  H01L41/04 ,  H03H9/54 ,  H03H3/10 ,  H01L41/18 ,  H01L41/22

CPC classification number: H03H9/0222 ,  H01L41/04 ,  H01L41/047 ,  H01L41/0477 ,  H01L41/18 ,  H01L41/22 ,  H03H3/02 ,  H03H3/04 ,  H03H3/08 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/54 ,  H03H2003/023 ,  H03H2003/027 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

公开(公告)号：US20170230030A1

公开(公告)日：2017-08-10

申请号：US15497146

申请日：2017-04-25

Applicant: SiTime Coporation

Inventor： Joseph C. Doll ,  Nicholas Miller ,  Charles I. Grosjean ,  Paul M. Hagelin ,  Ginel C. Hill

IPC: H03H9/125

CPC classification number: H03H9/125 ,  H03H3/0077 ,  H03H9/02259 ,  H03H9/02401 ,  H03H9/02448 ,  H03H9/1057 ,  H03H9/17 ,  H03H9/2463 ,  H03H2003/027 ,  H03H2009/02181 ,  H03H2009/02307 ,  H03H2009/155

Abstract: A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

公开(公告)号：US20170214382A1

公开(公告)日：2017-07-27

申请号：US15087320

申请日：2016-03-31

Applicant: RF Micro Devices, Inc.

Inventor： Kushal Bhattacharjee

IPC: H03H9/02 ,  H03H9/05 ,  H03H9/13

CPC classification number: H03H9/02228 ,  H03H3/0072 ,  H03H3/0077 ,  H03H3/02 ,  H03H3/08 ,  H03H9/0009 ,  H03H9/02244 ,  H03H9/02259 ,  H03H9/02275 ,  H03H9/02338 ,  H03H9/02787 ,  H03H9/0296 ,  H03H9/0538 ,  H03H9/13 ,  H03H9/131 ,  H03H9/145 ,  H03H9/14564 ,  H03H9/15 ,  H03H9/17 ,  H03H9/25 ,  H03H2003/027 ,  H03H2009/02165 ,  H03H2009/02496 ,  H03H2009/155

Abstract: A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

公开(公告)号：US09688528B2

公开(公告)日：2017-06-27

申请号：US14970933

申请日：2015-12-16

Applicant: FUJIFILM Corporation

Inventor： Takahiro Sano ,  Takayuki Naono

IPC: H04R17/00 ,  B81B3/00 ,  G01C19/56 ,  G01P15/09 ,  H03H9/17 ,  H04R17/10 ,  H01L41/08 ,  H01L41/113 ,  H01L41/319 ,  H04R31/00 ,  B81C1/00 ,  H03H3/02 ,  H03H3/04 ,  G01P15/08

CPC classification number: B81B3/0072 ,  B81B2203/0127 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C1/00666 ,  B81C2201/0112 ,  B81C2201/0169 ,  B81C2201/017 ,  B81C2201/0176 ,  G01C19/56 ,  G01P15/09 ,  G01P2015/084 ,  H01L41/0815 ,  H01L41/1138 ,  H01L41/319 ,  H03H9/17 ,  H03H2003/027 ,  H03H2003/0414 ,  H04R17/10 ,  H04R31/00 ,  H04R2201/003

Abstract: A producing method for a diaphragm-type resonant MEMS device includes forming a first silicon oxide film, forming a second silicon oxide film, forming a lower electrode, forming a piezoelectric film, forming an upper electrode, laminating the first silicon oxide film, the second silicon oxide film, the lower electrode, the piezoelectric film, and the upper electrode in this order on a first surface of a silicon substrate, and etching the opposite side surface of the first surface of the silicon substrate by deep reactive ion etching to form a diaphragm structure, in which the proportion R2 of the film thickness t2 of the second silicon oxide film with respect to the sum of the film thickness t1 of the first silicon oxide film and the film thickness t2 of the second silicon oxide film satisfies the following condition: 0.10 μm≦t1≦2.00 μm; and R2≧0.70.

公开(公告)号：US20170170805A1

公开(公告)日：2017-06-15

申请号：US15285223

申请日：2016-10-04

Applicant: Wentao Wang ,  Dana Weinstein

Inventor： Wentao Wang ,  Dana Weinstein

IPC: H03H9/17 ,  H03H3/02 ,  H01G4/06

CPC classification number: H03H9/17 ,  H01G4/06 ,  H03H3/02 ,  H03H9/2405 ,  H03H2003/027 ,  H03H2009/155

Abstract: A deep trench (DT) MEMS resonator includes a periodic array of unit cells, each of which includes a single DT formed in a semiconductor substrate and filled with a material whose acoustic impedance is different than that of the substrate. The filled DT is used as both an electrical capacitor and a mechanical structure at the same time, making it an elegant design that reduces footprint and fabrication complexity. Adding a second DT to each unit cell in a DT MEMS resonator forms a dual-trench DT (DTDT) MEMS resonator. In a DTDT unit cell, the first DT is filled with a conductor to sense, conduct, and/or generate an acoustic wave. The second DT in the DTDT unit cell is filled with an insulator. The width, filling, etc. of the second DT in the DTDT unit cell can be selected to tune the acoustic passband of the DTDT unit cell.

公开(公告)号：US20170170803A1

公开(公告)日：2017-06-15

申请号：US15238221

申请日：2016-08-16

Applicant: Northeastern University

Inventor： Matteo RINALDI ,  Cristian CASSELLA ,  Zhenyun QIAN ,  Yu HUI

IPC: H03H9/13 ,  G01J5/08 ,  H03H9/02 ,  G01J5/10 ,  H03H9/19 ,  H03H9/58

CPC classification number: H03H9/02244 ,  G01J3/42 ,  G01J5/046 ,  G01J5/20 ,  G01J5/44 ,  G01J5/58 ,  H01L41/18 ,  H03H3/02 ,  H03H9/13 ,  H03H9/15 ,  H03H9/17 ,  H03H9/2463 ,  H03H2003/027 ,  H03H2009/02503 ,  H03H2009/155 ,  H03H2009/241

Abstract: A resonator includes a piezoelectric plate and interdigitated electrode(s). The interdigitated electrode includes a plurality of conductive strips disposed over a top surface of the piezoelectric plate. A two-dimensional mode of mechanical vibration is excited in a cross sectional plane of the piezoelectric plate in response to an alternating voltage applied through the interdigitated electrode. The two-dimensional mode of mechanical vibration is a cross-sectional Lamé mode resonance (CLMR) or a degenerate cross-sectional Lamé mode resonance (dCLMR).