摘要:
The invention concerns microelectromechanical resonators. In particular, the invention provides a resonator comprising a support structure, a doped semiconductor resonator suspended to the support structure by at least one anchor, and actuator for exciting resonance into the resonator. According to the invention, the resonator comprises a base portion and at least one protrusion extending outward from the base portion and is excitable by said actuator into a compound resonance mode having temperature coefficient of frequency (TCF) characteristics, which are contributed by both the base portion and the at least one protrusion. The invention enables simple resonators, which are very well temperature compensated over a wide temperature range.
摘要:
A method for manufacturing a resonator that effectively addresses variations in resistivity for each wafer. The method for manufacturing a resonator includes forming a Si oxide film on a surface of a degenerated Si wafer, where the Si oxide film has a thickness set that is based on the doping amount of impurity in the degenerated Si wafer.
摘要:
A resonator including a piezoelectric plate and an interdigital electrode is provided. A ratio between a thickness of the plate and a pitch of the interdigital electrode may be from about 0.5 to about 1.5. A radiation detector including a resonator and an absorber layer capable of absorbing at least one of infrared and terahertz radiation is provided. A resonator including a piezoelectric plate and a two-dimensional electrically conductive material is provided.
摘要:
An electroacoustic transducer has a piezoelectric layer, which is structured in such a way that, in the case of an alternating electric field applied in one spatial direction, an oscillation mode with oscillations in three spatial directions is excited.
摘要:
A vibration device that includes a support member, vibration arms connected to the support member and each having an n-type Si layer which is a degenerate semiconductor, and electrodes provided so as to excite the vibration arms, and silicon oxide films containing impurities in contact with a respective lower surface of the n-type Si layers of each vibration arm.
摘要:
A contour mode micromechanical piezoelectric resonator. The resonator has a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom electrode and the top electrode. The piezoelectric resonator has a planar surface with a cantilevered periphery, dimensioned to undergo in-plane lateral displacement at the periphery. The resonator also includes means for applying an alternating electric field across the thickness of the piezoelectric resonator. The electric field is configured to cause the resonator to have a contour mode in-plane lateral displacement that is substantially in the plane of the planar surface of the resonator, wherein the fundamental frequency for the displacement of the piezoelectric resonator is set in part lithographically by the planar dimension of the bottom electrode, the top electrode or the piezoelectric layer.
摘要:
A MEMS vibrating device includes a substrate, at least one anchor on a surface of the substrate, and a vibrating body suspended over the substrate by the at least one anchor. The vibrating body includes a first piezoelectric thin-film layer, a second piezoelectric thin-film layer over the first piezoelectric thin-film layer, and an inter-digital transducer embedded between the first piezoelectric thin-film layer and the second piezoelectric thin-film layer. Embedding the inter-digital transducer between the first piezoelectric thin-film layer and the second piezoelectric thin-film layer may result in enhanced vibrational characteristics of the MEMS vibrating device, thereby increasing the performance thereof.
摘要:
A MEMS device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. Notably, the piezoelectric layer is a bimorph including a first bimorph layer and a second bimorph layer. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with the first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the substrate, such that the second electrode is in contact with the second bimorph layer of the piezoelectric layer. The second electrode may include a first conducting section and a second conducting section, which are inter-digitally dispersed on the second surface.
摘要:
A contour mode micromechanical piezoelectric resonator. The resonator has a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom electrode and the top electrode. The piezoelectric resonator has a planar surface with a cantilevered periphery, dimensioned to undergo in-plane lateral displacement at the periphery. The resonator also includes means for applying an alternating electric field across the thickness of the piezoelectric resonator. The electric field is configured to cause the resonator to have a contour mode in-plane lateral displacement that is substantially in the plane of the planar surface of the resonator, wherein the fundamental frequency for the displacement of the piezoelectric resonator is set in part lithographically by the planar dimension of the bottom electrode, the top electrode or the piezoelectric layer.
摘要:
A microelectromechanical resonator includes a resonator body anchored to a substrate by at least a pair of tethers that suspend the resonator body opposite an underlying opening in the substrate. A first thermally-actuated tuning beam is provided, which is mechanically coupled to a first portion of the resonator body that is spaced apart from the pair of tethers. The first thermally-actuated tuning beam is configured to induce a mechanical stress in the resonator body by establishing a thermal expansion difference between the first thermally-actuated tuning beam and the resonator body in response to a passing of current through the first thermally-actuated tuning beam.