公开(公告)号：US09147618B2

公开(公告)日：2015-09-29

申请号：US14060147

申请日：2013-10-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Frank Koschinsky ,  Bernd Hintze ,  Dirk Utess

IPC: H01L21/66 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L22/12 ,  H01L21/76834 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76868 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of providing a semiconductor structure comprising a diffusion barrier layer and a seed layer, the seed layer comprising an alloy of copper and a metal other than copper, depositing an electrically conductive material on the seed layer, performing an annealing process, wherein at least a first portion of the metal other than copper diffuses away from a vicinity of the diffusion barrier layer through the electrically conductive material, and wherein, in case of a defect in the diffusion barrier layer, a second portion of the metal other than copper indicative of the defect remains in a vicinity of the defect, measuring a distribution of the metal other than copper in at least a portion of the semiconductor structure, and determining, from the measured distribution of the metal other than copper, if the second portion of the metal other than copper is present.

Abstract translation: 一种提供包括扩散阻挡层和籽晶层的半导体结构的方法，种子层包括铜和不同于铜的金属的合金，在种子层上沉积导电材料，进行退火处理，其中至少 除了铜以外的金属的第一部分通过导电材料扩散到扩散阻挡层的附近，并且其中，在扩散阻挡层中存在缺陷的情况下，除铜之外的金属的第二部分指示 缺陷保留在缺陷附近，测量半导体结构的至少一部分中除铜以外的金属的分布，并且从测定的除了铜以外的金属的分布确定金属的第二部分 除了铜以外。

公开(公告)号：US20150111316A1

公开(公告)日：2015-04-23

申请号：US14060147

申请日：2013-10-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Frank Koschinsky ,  Bernd Hintze ,  Dirk Utess

IPC: H01L21/66 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L22/12 ,  H01L21/76834 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76868 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of providing a semiconductor structure comprising a diffusion barrier layer and a seed layer, the seed layer comprising an alloy of copper and a metal other than copper, depositing an electrically conductive material on the seed layer, performing an annealing process, wherein at least a first portion of the metal other than copper diffuses away from a vicinity of the diffusion barrier layer through the electrically conductive material, and wherein, in case of a defect in the diffusion barrier layer, a second portion of the metal other than copper indicative of the defect remains in a vicinity of the defect, measuring a distribution of the metal other than copper in at least a portion of the semiconductor structure, and determining, from the measured distribution of the metal other than copper, if the second portion of the metal other than copper is present.

Abstract translation: 一种提供包括扩散阻挡层和籽晶层的半导体结构的方法，种子层包括铜和不同于铜的金属的合金，在种子层上沉积导电材料，进行退火处理，其中至少 除了铜之外的金属的第一部分通过导电材料扩散到扩散阻挡层的附近，并且其中在扩散阻挡层中存在缺陷的情况下，除铜之外的金属的第二部分指示 缺陷保留在缺陷附近，测量半导体结构的至少一部分中除铜以外的金属的分布，并且从测定的除了铜以外的金属的分布确定金属的第二部分 除了铜以外。