公开(公告)号：US09524911B1

公开(公告)日：2016-12-20

申请号：US14858412

申请日：2015-09-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hao-Cheng Tsai ,  Yong Meng Lee ,  Min-hwa Chi

IPC: H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/08 ,  H01L29/40 ,  H01L27/088 ,  H01L21/762

CPC classification number: H01L21/823481 ,  H01L21/76232 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/66795 ,  H01L29/785

Abstract: Methods for creating self-aligned FINFET SDBs for minimum gate junction pitch and epitaxy formation. Embodiments include forming separated openings in a hard mask on upper surfaces of Si fins; forming cavities in the fins, each of the cavities having a concave shape and a width extending under the hard mask on each side of the cavity; forming trenches in the fins, the trenches having an upper width substantially equal to a width of the openings and less than the width of a cavity; removing the hard mask; filling the trenches and the cavities with oxide, forming STI regions; forming an oxide mask layer on the upper surfaces of the fins and the STI regions; removing upper portions of the oxide in sections between the STI regions; and removing remaining portions of the oxide mask revealing the fins and upper surfaces of the STI regions.

Abstract translation: 用于创建自对准FINFET SDB的方法，用于最小栅极连接节距和外延形成。 实施例包括在Si散热片的上表面上形成硬掩模中的分开的开口; 在所述翅片中形成空腔，所述空腔中的每一个具有凹形形状和在所述空腔的每一侧上在所述硬掩模下方延伸的宽度; 在所述翅片中形成沟槽，所述沟槽的上宽度基本上等于所述开口的宽度并小于空腔的宽度; 去除硬面膜; 用氧化物填充沟槽和空腔，形成STI区域; 在鳍片和STI区域的上表面上形成氧化物掩模层; 去除STI区域之间部分氧化物的上部; 并且去除暴露出STI区域的翅片和上表面的氧化物掩模的剩余部分。