公开(公告)号：US09419137B1

公开(公告)日：2016-08-16

申请号：US14641809

申请日：2015-03-09

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Abner Bello ,  Xiuyu Cai ,  Hugh Porter ,  Daniel Pham

IPC: H01L29/78 ,  H01L21/8234 ,  H01L21/324 ,  H01L21/3105 ,  H01L21/762 ,  H01L27/088 ,  H01L29/06

CPC classification number: H01L29/7847 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0924

Abstract: A method of straining fins of a FinFET device by using a stress memorization film and the resulting device are provided. Embodiments include providing a plurality of bulk Si fins, the plurality of bulk Si fins having a recessed oxide layer therebetween; forming a stress memorization layer over the plurality of bulk Si fins and the recessed oxide layer; annealing the stress memorization layer, the plurality of bulk Si fins, and the recessed oxide layer; and removing the stress memorization layer.

Abstract translation: 提供了通过使用应力记忆膜来制造FinFET器件的鳍片的方法以及所得到的器件。 实施例包括提供多个体积Si散热片，所述多个本体Si散热片在其间具有凹陷的氧化物层; 在所述多个体积Si散热片和所述凹陷氧化物层上形成应力记忆层; 退火应力记忆层，多个体积Si散热片和凹陷氧化物层; 并去除应力记忆层。