公开(公告)号：US10325808B2

公开(公告)日：2019-06-18

申请号：US15858691

申请日：2017-12-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ivan Huang ,  Elavarasan Pannerselvam ,  Vijay Sukumaran

IPC: H01L21/78 ,  H01L21/02 ,  H01L21/027 ,  H01L21/263 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/56 ,  H01L23/00

Abstract: A method of forming a 3D crack-stop structure in, through, and wrapped around the edges of a substrate to prevent through-substrate cracks from propagating and breaking the substrate and the resulting device are provided. Embodiments include providing a substrate including one or more dies; forming a continuous first trench near an outer edge of the substrate; forming a continuous second trench parallel to and on an opposite side of the first trench from the outer edge; forming a continuous row of vias parallel to and on an opposite side of the second trench from the first trench, forming a continuous third trench parallel to and near an outer edge of each of the dies; forming a protective layer wrapping around the outer edge of the substrate and over and filling the trenches and vias; and patterning active areas of the substrate between the vias and the third trench.

公开(公告)号：US09892971B1

公开(公告)日：2018-02-13

申请号：US15392042

申请日：2016-12-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ivan Huang ,  Elavarasan Pannerselvam ,  Vijay Sukumaran

IPC: H01L21/302 ,  H01L21/78 ,  H01L23/00 ,  H01L21/56 ,  H01L21/263 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/78 ,  H01L21/02118 ,  H01L21/0273 ,  H01L21/2633 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/561 ,  H01L23/562

Abstract: A method of forming a 3D crack-stop structure in, through, and wrapped around the edges of a substrate to prevent through-substrate cracks from propagating and breaking the substrate and the resulting device are provided. Embodiments include providing a substrate including one or more dies; forming a continuous first trench near an outer edge of the substrate; forming a continuous second trench parallel to and on an opposite side of the first trench from the outer edge; forming a continuous row of vias parallel to and on an opposite side of the second trench from the first trench, forming a continuous third trench parallel to and near an outer edge of each of the dies; forming a protective layer wrapping around the outer edge of the substrate and over and filling the trenches and vias; and patterning active areas of the substrate between the vias and the third trench.