-
公开(公告)号：US10347622B2
公开(公告)日：2019-07-09
申请号：US15398946
申请日：2017-01-05
Applicant: GLOBALFOUNDRIES Inc.
Inventor： You Li , Manjunatha Prabu , Mujahid Muhammad , John B. Campi, Jr. , Robert J. Gauthier, Jr. , Souvick Mitra
Abstract: Silicon-controlled rectifiers, electrostatic discharge circuits, and methods of fabricating a silicon-controlled rectifier for use in an electrostatic discharge circuit. A device structure for the silicon controlled rectifier includes a first well of a first conductivity type in a semiconductor layer, a second well of a second conductivity type in the semiconductor layer, a cathode coupled with the first well, and an anode coupled with the second well. First and second body contacts are coupled with the first well, and the first and second body contacts each have the first conductivity type. A triggering device may be coupled with the first body contact.
-
2.发明申请公开(公告)号：US20180190644A1
公开(公告)日：2018-07-05
申请号：US15398946
申请日：2017-01-05
Applicant: GLOBALFOUNDRIES Inc.
Inventor： You Li , Manjunatha Prabu , Mujahid Muhammad , John B. Campi, Jr. , Robert J. Gauthier, Jr. , Souvick Mitra
IPC: H01L27/02 , H01L29/08 , H01L29/10 , H01L21/8222
CPC classification number: H01L27/0262 , H01L27/0641 , H01L29/0653 , H01L29/0834 , H01L29/0839 , H01L29/7428 , H01L29/7436
Abstract: Silicon-controlled rectifiers, electrostatic discharge circuits, and methods of fabricating a silicon-controlled rectifier for use in an electrostatic discharge circuit. A device structure for the silicon controlled rectifier includes a first well of a first conductivity type in a semiconductor layer, a second well of a second conductivity type in the semiconductor layer, a cathode coupled with the first well, and an anode coupled with the second well. First and second body contacts are coupled with the first well, and the first and second body contacts each have the first conductivity type. A triggering device may be coupled with the first body contact.
-
Search Results
2
records
(took 0.012 seconds)
