公开(公告)号：US20160163551A1

公开(公告)日：2016-06-09

申请号：US14560479

申请日：2014-12-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Anh Duong ,  Tae-Hoon Kim ,  Kakoli Das

IPC: H01L21/283

CPC classification number: H01L21/02334 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/67075

Abstract: A method includes forming a refractory metal alloy layer above a silicon-containing material, performing a first heating process to form a metal silicide region in at least a portion of the silicon-containing material using the refractory metal alloy layer, and removing at least a first portion of an unreacted portion of the refractory metal alloy layer using a first solution comprising a solvent and an organic chelator.

Abstract translation: 一种方法包括在含硅材料之上形成难熔金属合金层，在使用难熔金属合金层的至少一部分含硅材料中进行第一加热工艺以形成金属硅化物区域，并且至少除去 使用包含溶剂和有机螯合剂的第一溶液的难熔金属合金层的未反应部分的第一部分。