公开(公告)号：US20150105308A1

公开(公告)日：2015-04-16

申请号：US14574995

申请日：2014-12-18

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: C11D11/00 ,  C11D7/04 ,  C11D7/08 ,  C11D7/26 ,  H01L21/67 ,  H01L21/02

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 公开了一种在镍铂硅化过程中从半导体衬底中清除残余物的方法，包括多步残渣清洗，包括将底物暴露于王水溶液中，然后暴露于含有盐酸和过氧化氢的溶液中。 SC2溶液可以与剩余的铂残留物进一步反应，使其更易溶于水溶液，从而从基底表面溶解。

公开(公告)号：US08946015B2

公开(公告)日：2015-02-03

申请号：US14333715

申请日：2014-07-17

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: H01L21/336 ,  H01L21/02 ,  H01L29/66 ,  H01L21/28 ,  H01L21/324 ,  H01L29/49

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 公开了一种在镍铂硅化过程中从半导体衬底中清除残余物的方法，包括多步残渣清洗，包括将底物暴露于王水溶液中，然后暴露于含有盐酸和过氧化氢的溶液中。 SC2溶液可以与剩余的铂残留物进一步反应，使其更易溶于水溶液，从而从基底表面溶解。

公开(公告)号：US09399753B2

公开(公告)日：2016-07-26

申请号：US14574995

申请日：2014-12-18

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: C11D11/00 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L21/324 ,  H01L29/49 ,  C11D7/04 ,  C11D7/08 ,  C11D7/26 ,  H01L21/67

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 公开了一种在镍铂硅化过程中从半导体衬底中清除残余物的方法，包括多步残渣清洗，包括将底物暴露于王水溶液中，然后暴露于含有盐酸和过氧化氢的溶液中。 SC2溶液可以与剩余的铂残留物进一步反应，使其更易溶于水溶液，从而从基底表面溶解。

公开(公告)号：US20150348833A1

公开(公告)日：2015-12-03

申请号：US14807480

申请日：2015-07-23

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/321

CPC classification number: H01L21/76843 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract translation: 可以选择性地对Ta / TaN阻挡衬垫和SiC硬掩模层进行蚀刻，例如，以减少潜在的铜污染。 铜膜可以比衬垫更凹入，以进一步增强保护。 可以使用包含HF和HCl的混合物的湿式蚀刻溶液来相对于衬垫材料选择性地蚀刻铜，例如，铜膜可以凹陷在2和3nm之间，并且阻挡衬里膜可以凹陷在1.5和 2 nm。

公开(公告)号：US09159683B2

公开(公告)日：2015-10-13

申请号：US14176697

申请日：2014-02-10

Applicant: GLOBALFOUNDRIES Inc. ,  Intermolecular Inc.

Inventor： Reiner Willeke ,  Tanya Atanasova ,  Anh Duong ,  Greg Nowling

IPC: H01L21/44 ,  H01L23/00 ,  H01L21/3213

CPC classification number: H01L24/11 ,  C23F1/02 ,  C23F1/26 ,  C23F1/34 ,  C23F1/44 ,  H01L21/32134 ,  H01L21/32139 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11848 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/04953 ,  H01L2924/04941

Abstract: Methods for etching copper in the fabrication of integrated circuits are disclosed. In one exemplary embodiment, a method for fabricating an integrated circuit includes providing an integrated circuit structure including a copper bump structure and a copper seed layer underlying and adjacent to the copper bump structure and etching the seed layer selective to the copper bump structure using a wet etching chemistry consisting of H3PO4 in a volume percentage of about 0.07 to about 0.36, H2O2 in a volume percentage of about 0.1 to about 0.7, and a remainder of H2O, and optionally NH4OH.

Abstract translation: 公开了在制造集成电路中蚀刻铜的方法。 在一个示例性实施例中，一种用于制造集成电路的方法包括提供集成电路结构，该集成电路结构包括铜凸块结构和位于铜凸块结构之下并与铜凸起结构相邻的铜籽晶层，并使用湿法蚀刻对铜凸块结构有选择性的晶种层 以约0.07至约0.36的体积百分比由H 3 PO 4组成的体积百分比为约0.1至约0.7的H 2 O 2，以及剩余的H 2 O和任选的NH 4 OH的蚀刻化学。

公开(公告)号：US20150228595A1

公开(公告)日：2015-08-13

申请号：US14176697

申请日：2014-02-10

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES Inc.

Inventor： Reiner Willeke ,  Tanya Atanasova ,  Anh Duong ,  Greg Nowling

IPC: H01L23/00 ,  H01L21/3213

CPC classification number: H01L24/11 ,  C23F1/02 ,  C23F1/26 ,  C23F1/34 ,  C23F1/44 ,  H01L21/32134 ,  H01L21/32139 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11848 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/04953 ,  H01L2924/04941

Abstract: Methods for etching copper in the fabrication of integrated circuits are disclosed. In one exemplary embodiment, a method for fabricating an integrated circuit includes providing an integrated circuit structure including a copper bump structure and a copper seed layer underlying and adjacent to the copper bump structure and etching the seed layer selective to the copper bump structure using a wet etching chemistry consisting of H3PO4 in a volume percentage of about 0.07 to about 0.36, H2O2 in a volume percentage of about 0.1 to about 0.7, and a remainder of H2O, and optionally NH4OH.

Abstract translation: 公开了在制造集成电路中蚀刻铜的方法。 在一个示例性实施例中，一种用于制造集成电路的方法包括提供集成电路结构，该集成电路结构包括铜凸块结构和位于铜凸块结构之下并与铜凸起结构相邻的铜籽晶层，并使用湿法蚀刻对铜凸块结构有选择性的晶种层 以约0.07至约0.36的体积百分比由H 3 PO 4组成的体积百分比为约0.1至约0.7的H 2 O 2，以及剩余的H 2 O和任选的NH 4 OH的蚀刻化学。

公开(公告)号：US20160163551A1

公开(公告)日：2016-06-09

申请号：US14560479

申请日：2014-12-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Anh Duong ,  Tae-Hoon Kim ,  Kakoli Das

IPC: H01L21/283

CPC classification number: H01L21/02334 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/67075

Abstract: A method includes forming a refractory metal alloy layer above a silicon-containing material, performing a first heating process to form a metal silicide region in at least a portion of the silicon-containing material using the refractory metal alloy layer, and removing at least a first portion of an unreacted portion of the refractory metal alloy layer using a first solution comprising a solvent and an organic chelator.

Abstract translation: 一种方法包括在含硅材料之上形成难熔金属合金层，在使用难熔金属合金层的至少一部分含硅材料中进行第一加热工艺以形成金属硅化物区域，并且至少除去 使用包含溶剂和有机螯合剂的第一溶液的难熔金属合金层的未反应部分的第一部分。

公开(公告)号：US09343408B2

公开(公告)日：2016-05-17

申请号：US14075228

申请日：2013-11-08

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L23/532 ,  H01L21/3213 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26

CPC classification number: H01L23/5329 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  H01L21/32134 ,  H01L21/76834 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and H2SO4 can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract translation: 可以选择性地对Ta / TaN阻挡衬垫和SiC硬掩模层进行蚀刻，例如，以减少潜在的铜污染。 铜膜可以比内衬更凹入，以进一步增强保护。 包括HF和H 2 SO 4的混合物的湿蚀刻溶液可用于相对于衬垫材料选择性蚀刻铜，例如，铜膜可以凹陷在2和3nm之间，并且阻挡衬里膜可以凹入1.5和 2 nm。

公开(公告)号：US20150255340A1

公开(公告)日：2015-09-10

申请号：US14202268

申请日：2014-03-10

Applicant: GLOBALFOUNDRIES, Inc. ,  Intermolecular Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract translation: 可以选择性地对Ta / TaN阻挡衬垫和SiC硬掩模层进行蚀刻，例如，以减少潜在的铜污染。 铜膜可以比衬垫更凹入，以进一步增强保护。 可以使用包含HF和HCl的混合物的湿式蚀刻溶液来相对于衬垫材料选择性地蚀刻铜，例如，铜膜可以凹陷在2和3nm之间，并且阻挡衬里膜可以凹陷在1.5和 2 nm。

公开(公告)号：US20150130065A1

公开(公告)日：2015-05-14

申请号：US14075228

申请日：2013-11-08

Applicant: GLOBALFOUNDRIES, Inc. ,  Intermolecular Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5329 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  H01L21/32134 ,  H01L21/76834 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and H2SO4 can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract translation: 可以选择性地对Ta / TaN阻挡衬垫和SiC硬掩模层进行蚀刻，例如，以减少潜在的铜污染。 铜膜可以比衬垫更凹入，以进一步增强保护。 包括HF和H 2 SO 4的混合物的湿蚀刻溶液可用于相对于衬垫材料选择性蚀刻铜，例如，铜膜可以凹陷在2和3nm之间，并且阻挡衬里膜可以凹入1.5和 2 nm。