公开(公告)号：US09349661B2

公开(公告)日：2016-05-24

申请号：US14161738

申请日：2014-01-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hanyi Ding ,  Oleg Gluschenkov ,  Ping-Chuan Wang ,  Lin Zhou

IPC: H01L21/78 ,  H01L21/66 ,  H01L21/768

CPC classification number: H01L22/26 ,  H01L21/30625 ,  H01L21/76898 ,  H01L22/14

Abstract: Embodiments of the present invention provide an apparatus and method for wafer thinning endpoint detection. Embodiments of the present invention utilize through silicon via (TSV) structures formed in the wafer. A specially made wafer handle is bonded to the wafer. Conductive slurry is used in the wafer backside thinning process. The wafer handle provides electrical connectivity to an electrical measurement tool, and conductive posts in the wafer handle are proximal to a test structure on the wafer. A plurality of electrically isolated TSVs is monitored via the electrical measurement tool. When the TSVs are exposed on the backside as a result of thinning, the conductive slurry shorts the electrically isolated TSVs, changing the electrical properties of the plurality of TSVs. The change in electrical properties is detected and used to trigger termination of the wafer backside thinning process.

Abstract translation: 本发明的实施例提供了一种用于晶片薄化端点检测的装置和方法。 本发明的实施例利用在晶片中形成的硅通孔（TSV）结构。 特殊制造的晶圆把手与晶片结合。 导电浆料用于晶片背面变薄处理。 晶片手柄提供与电测量工具的电连接，并且晶片把手中的导电柱靠近晶片上的测试结构。 通过电测量工具监测多个电隔离TSV。 当TSV由于变薄而暴露在背面时，导电浆料使电隔离的TSV短路，改变多个TSV的电性能。 检测电特性的变化并用于触发晶圆背面变薄过程的终止。