公开(公告)号：US10483154B1

公开(公告)日：2019-11-19

申请号：US16015351

申请日：2018-06-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Elliot John Smith ,  Marcus Wolf ,  Carsten Peters ,  Markus Lenski ,  Loic Gaben

IPC: H01L21/762 ,  H01L21/02 ,  H01L29/06

Abstract: In various aspects, the present disclosure relates to device structures and a method of forming such a device structure. In some illustrative embodiments herein, a device is provided, including a semiconductor substrate having a first trench formed therein, and a first trench isolation structure formed in the first trench. The first trench isolation structure includes first and second insulating liners formed adjacent inner surfaces of the first trench, wherein the first insulating liner is in direct contact with inner surfaces of the first trench and the second insulating liner is formed directly on the first insulating liner, and a first insulating filling material which at least partially fills the first trench. In some aspects, a thickness of the first insulating liner is greater than a thickness of the second insulating liner.