公开(公告)号：US09401263B2

公开(公告)日：2016-07-26

申请号：US14031563

申请日：2013-09-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xiang Hu ,  Gabriel Padron Wells ,  Jack Chao-Hsu Chang ,  Mingmei Wang ,  Taejoon Han

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/3213

CPC classification number: H01J37/32146 ,  H01J37/32174 ,  H01J2237/3341 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/32137

Abstract: Etching a feature of a structure by an etch system is facilitated by varying supply of radio frequency (RF) power pulses to the etch system. The varying provides at least one RF power pulse, of the supplied RF power pulses, that deviates from one or more other RF power pulses, of the supplied RF power pulses, by at least one characteristic.

Abstract translation: 通过改变对蚀刻系统的射频（RF）功率脉冲的供应，便于蚀刻系统蚀刻结构的特征。 变化通过至少一个特征提供所提供的RF功率脉冲中提供的RF功率脉冲的至少一个RF功率脉冲，其偏离所提供的RF功率脉冲的一个或多个其它RF功率脉冲。