公开(公告)号：US09806032B1

公开(公告)日：2017-10-31

申请号：US15384741

申请日：2016-12-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Wei Lin ,  Nailong He ,  Upinder Singh

IPC: H01L23/544 ,  H01L49/02 ,  H01L23/522 ,  H01L27/06

CPC classification number: H01L23/544 ,  H01L23/5223 ,  H01L23/5228 ,  H01L27/0682 ,  H01L28/75 ,  H01L2223/54426 ,  H01L2223/54453

Abstract: The disclosure relates to integrated circuit (IC) structures and fabrication techniques. Methods according to the disclosure can include: providing a precursor structure including: a first inter-metal dielectric (IMD); a barrier dielectric positioned on the first IMD; forming an insulator on the barrier dielectric of the precursor structure, wherein an upper surface of the insulator includes a first trench and a second trench laterally separated from the first trench; forming an alignment marker over the precursor structure by filling the first trench with a first refractory metal film; forming a first metal-insulator-metal (MIM) electrode by filling the second trench with the first refractory metal film; recessing the insulator without exposing an upper surface of the barrier dielectric; forming a MIM dielectric layer on the insulator; and forming a second MIM electrode on the MIM dielectric layer, such that the second MIM electrode overlies a portion of the first MIM electrode.