公开(公告)号：US20180374749A1

公开(公告)日：2018-12-27

申请号：US15630002

申请日：2017-06-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Keith Kwong Hon WONG ,  Wonwoo KIM ,  Praneet ADUSUMILLI

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/532

Abstract: A cobalt contact includes a dual silicide barrier layer. The barrier layer, which may be formed in situ, includes silicides of titanium and cobalt, and provides an effective adhesion layer between the cobalt contact and a conductive device region such as the source/drain junction of a semiconductor device, eliminating void formation during a metal anneal.

公开(公告)号：US20180174965A1

公开(公告)日：2018-06-21

申请号：US15381826

申请日：2016-12-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Vimal KAMINENI ,  James KELLY ,  Praneet ADUSUMILLI ,  Oscar VAN DER STRATEN ,  Balasubramanian PRANATHARTHIHARAN

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76883 ,  H01L21/76882 ,  H01L23/53209

Abstract: Devices and methods of fabricating integrated circuit devices via cobalt fill metallization are provided. A method includes, for instance, providing an intermediate semiconductor device having at least one trench, forming at least one layer of semiconductor material on the device, depositing a first cobalt (Co) layer on the second layer, and performing an anneal reflow process on the device. Also provided are intermediate semiconductor devices. An intermediate semiconductor device includes, for instance, at least one trench formed within the device, the trench having a bottom portion and sidewalls, at least one layer of semiconductor material disposed on the device, a first cobalt (Co) layer disposed on the at least one layer of semiconductor material, wherein the at least one layer of semiconductor material includes at least a first semiconductor material and a second semiconductor material.