公开(公告)号：US20180197882A1

公开(公告)日：2018-07-12

申请号：US15912141

申请日：2018-03-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： David PRITCHARD ,  Lixia LEI ,  Deniz E. CIVAY ,  Scott D. LUNING ,  Neha NAYYAR

IPC: H01L27/12 ,  H01L29/78 ,  H01L29/49 ,  H01L29/417 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/84 ,  H01L29/40

CPC classification number: H01L27/1203 ,  H01L21/823418 ,  H01L21/84 ,  H01L29/0649 ,  H01L29/401 ,  H01L29/41783 ,  H01L29/4916 ,  H01L29/7838

Abstract: Methods for eliminating the distance between a BULEX and SOI and the resulting devices are disclosed. Embodiments include providing a silicon layer on a BOX layer on a silicon substrate; forming two active areas in the silicon layer, separated by a space; forming first and second polysilicon gates over one active area, a third polysilicon gate over the space, and fourth and fifth polysilicon gates over the other active area, the second and fourth gates abutting edges of the space; forming spacers at opposite sides of each gate; removing the second, third, and fourth gates and the corresponding spacers; removing the silicon layer and BOX layer in the space, forming a trench and exposing the silicon substrate; forming second spacers on sidewalls of the trench; forming raised source/drain regions on each active area; and forming a p-well contact on the silicon substrate between the second spacers.