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    Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device
    1.
    发明授权
    Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device 有权
    形成用于导电铜结构的铜基氮化物衬垫/钝化层的方法以及所得到的器件

    公开(公告)号：US08859419B2

    公开(公告)日：2014-10-14

    申请号：US13757338

    申请日：2013-02-01

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Xunyuan Zhang ,  Larry Zhao ,  Ming He ,  Sean Lin ,  John Iacoponi ,  Errol Todd Ryan

    IPC: H01L23/58 ,  H01L29/04 ,  H01L31/036 ,  H01L29/06 ,  H01L31/0352 ,  H01L23/22 ,  H01L23/24 ,  H01L23/532 ,  H01L21/768

    CPC classification number: H01L23/53238 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53233 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a barrier layer in the trench/via, forming a copper-based seed layer on the barrier layer, converting at least a portion of the copper-based seed layer into a copper-based nitride layer, depositing a bulk copper-based material on the copper-based nitride layer so as to overfill the trench/via and performing at least one chemical mechanical polishing process to remove excess materials positioned outside of the trench/via to thereby define a copper-based conductive structure. A device disclosed herein includes a layer of insulating material, a copper-based conductive structure positioned in a trench/via within the layer of insulating material and a copper-based silicon or germanium nitride layer positioned between the copper-based conductive structure and the layer of insulating material.

    Abstract translation: 本文公开的一种说明性方法包括在绝缘材料层中形成沟槽/通孔，在沟槽/通孔中形成阻挡层，在阻挡层上形成铜基种子层，将至少一部分铜基 种子层形成铜基氮化物层，在铜基氮化物层上沉积大块铜基材料，以覆盖沟槽/通孔，并执行至少一种化学机械抛光工艺，以去除位于沟槽之外的多余材料 / via，从而限定铜基导电结构。 本文公开的装置包括绝缘材料层，位于绝缘材料层内的沟槽/通孔中的铜基导电结构以及位于铜基导电结构和层之间的铜基硅或氮化锗层 的绝缘材料。

    Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting device
    2.
    发明授权
    Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting device 有权
    使用没有阻挡层的铜基氮化物种子层形成导电铜基结构的方法和所得到的器件

    公开(公告)号：US08753975B1

    公开(公告)日：2014-06-17

    申请号：US13757288

    申请日：2013-02-01

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Xunyuan Zhang ,  Larry Zhao ,  Ming He ,  Sean Lin ,  John Iacoponi ,  Errol Todd Ryan

    IPC: H01L21/4763

    CPC classification number: H01L21/76873 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method includes forming a trench/via in a layer of insulating material, forming a first layer comprised of silicon or germanium on the insulating material in the trench/via, forming a copper-based seed layer on the first layer, converting at least a portion of the copper-based seed layer into a copper-based nitride layer, depositing a bulk copper-based material on the copper-based nitride layer so as to overfill the trench/via and performing at least one chemical mechanical polishing process to remove excess materials positioned outside of the trench/via to thereby define a copper-based conductive structure. A device includes a layer of insulating material, a copper-based conductive structure positioned in a trench/via within the layer of insulating material and a copper-based nitride layer positioned between the copper-based conductive structure and the layer of insulating material, wherein the copper-based nitride layer contacts both of the copper-based conductive structure and the layer of insulating material.

    Abstract translation: 一种方法包括在绝缘材料层中形成沟槽/通孔，在沟槽/通孔中的绝缘材料上形成由硅或锗构成的第一层，在第一层上形成铜基种子层，至少转化为 铜基种子层的一部分成为铜基氮化物层，在铜基氮化物层上沉积大量铜基材料，以覆盖沟槽/通孔，并执行至少一种化学机械抛光工艺以除去过量的 位于沟槽/通孔外部的材料，从而限定铜基导电结构。 一种器件包括绝缘材料层，位于绝缘材料层内的沟槽/通孔中的铜基导电结构以及位于铜基导电结构和绝缘材料层之间的铜基氮化物层，其中 铜基氮化物层接触铜基导电结构和绝缘材料层。

    Copper based nitride liner passivation layers for conductive copper structures
    3.
    发明授权
    Copper based nitride liner passivation layers for conductive copper structures 有权
    用于导电铜结构的铜基氮化物衬垫钝化层

    公开(公告)号：US09318436B2

    公开(公告)日：2016-04-19

    申请号：US14470213

    申请日：2014-08-27

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Xunyuan Zhang ,  Larry Zhao ,  Ming He ,  Sean Lin ,  John Iacoponi ,  Errol Todd Ryan

    IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768

    CPC classification number: H01L23/53238 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53233 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a barrier layer in the trench/via, forming a copper-based seed layer on the barrier layer, converting at least a portion of the copper-based seed layer into a copper-based nitride layer, depositing a bulk copper-based material on the copper-based nitride layer so as to overfill the trench/via and performing at least one chemical mechanical polishing process to remove excess materials positioned outside of the trench/via to thereby define a copper-based conductive structure. A device disclosed herein includes a layer of insulating material, a copper-based conductive structure positioned in a trench/via within the layer of insulating material and a copper-based silicon or germanium nitride layer positioned between the copper-based conductive structure and the layer of insulating material.

    Abstract translation: 本文公开的一种说明性方法包括在绝缘材料层中形成沟槽/通孔，在沟槽/通孔中形成阻挡层，在阻挡层上形成铜基种子层，将至少一部分铜基 种子层形成铜基氮化物层，在铜基氮化物层上沉积大块铜基材料，以覆盖沟槽/通孔，并执行至少一种化学机械抛光工艺，以去除位于沟槽之外的多余材料 / via，从而限定铜基导电结构。 本文公开的装置包括绝缘材料层，位于绝缘材料层内的沟槽/通孔中的铜基导电结构以及位于铜基导电结构和层之间的铜基硅或氮化锗层 的绝缘材料。

    METHODS OF FORMING COPPER-BASED NITRIDE LINER/PASSIVATION LAYERS FOR CONDUCTIVE COPPER STRUCTURES AND THE RESULTING DEVICE
    4.
    发明申请
    METHODS OF FORMING COPPER-BASED NITRIDE LINER/PASSIVATION LAYERS FOR CONDUCTIVE COPPER STRUCTURES AND THE RESULTING DEVICE 审中-公开
    导电铜结构和结晶器件形成铜基氮化物/钝化层的方法

    公开(公告)号：US20140361435A1

    公开(公告)日：2014-12-11

    申请号：US14470213

    申请日：2014-08-27

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Xunyuan Zhang ,  Larry Zhao ,  Ming He ,  Sean Lin ,  John Iacoponi ,  Errol Todd Ryan

    IPC: H01L23/532 ,  H01L23/522

    CPC classification number: H01L23/53238 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53233 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a barrier layer in the trench/via, forming a copper-based seed layer on the barrier layer, converting at least a portion of the copper-based seed layer into a copper-based nitride layer, depositing a bulk copper-based material on the copper-based nitride layer so as to overfill the trench/via and performing at least one chemical mechanical polishing process to remove excess materials positioned outside of the trench/via to thereby define a copper-based conductive structure. A device disclosed herein includes a layer of insulating material, a copper-based conductive structure positioned in a trench/via within the layer of insulating material and a copper-based silicon or germanium nitride layer positioned between the copper-based conductive structure and the layer of insulating material.

    Abstract translation: 本文公开的一种说明性方法包括在绝缘材料层中形成沟槽/通孔，在沟槽/通孔中形成阻挡层，在阻挡层上形成铜基种子层，将至少一部分铜基 种子层形成铜基氮化物层，在铜基氮化物层上沉积大块铜基材料，以覆盖沟槽/通孔，并执行至少一种化学机械抛光工艺，以去除位于沟槽之外的多余材料 / via，从而限定铜基导电结构。 本文公开的装置包括绝缘材料层，位于绝缘材料层内的沟槽/通孔中的铜基导电结构以及位于铜基导电结构和层之间的铜基硅或氮化锗层 的绝缘材料。

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