公开(公告)号：US09437524B2

公开(公告)日：2016-09-06

申请号：US14514425

申请日：2014-10-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shan Gao ,  Seung Man Choi

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/7682 ,  H01L21/76898 ,  H01L2224/11 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide a novel process integration for air gap formation at the sidewalls for a Through Silicon Via (TSV) structure. The sidewall air gap formation scheme for the TSV structure of disclosed embodiments reduces parasitic capacitance and depletion regions in between the substrate silicon and TSV conductor, and serves to also reduce mechanical stress in silicon substrate surrounding the TSV conductor.

Abstract translation: 本发明的实施例为通硅通（TSV）结构的侧壁处形成气隙提供了新颖的工艺集成。 用于所公开实施例的TSV结构的侧壁气隙形成方案降低了衬底硅和TSV导体之间的寄生电容和耗尽区，并且还用于降低围绕TSV导体的硅衬底中的机械应力。

公开(公告)号：US20150054139A1

公开(公告)日：2015-02-26

申请号：US14514425

申请日：2014-10-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shan Gao ,  Seung Man Choi

IPC: H01L23/48

CPC classification number: H01L23/481 ,  H01L21/7682 ,  H01L21/76898 ,  H01L2224/11 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide a novel process integration for air gap formation at the sidewalls for a Through Silicon Via (TSV) structure. The sidewall air gap formation scheme for the TSV structure of disclosed embodiments reduces parasitic capacitance and depletion regions in between the substrate silicon and TSV conductor, and serves to also reduce mechanical stress in silicon substrate surrounding the TSV conductor.

Abstract translation: 本发明的实施例为通硅通（TSV）结构的侧壁处形成气隙提供了新颖的工艺集成。 用于所公开实施例的TSV结构的侧壁气隙形成方案降低了衬底硅和TSV导体之间的寄生电容和耗尽区，并且还用于降低围绕TSV导体的硅衬底中的机械应力。