公开(公告)号：US20150371956A1

公开(公告)日：2015-12-24

申请号：US14309024

申请日：2014-06-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Rahul Agarwal ,  Shun Qiang Gong

IPC: H01L23/00 ,  H01L21/283 ,  H01L21/3065

CPC classification number: H01L23/562 ,  H01L21/02019 ,  H01L21/02021 ,  H01L21/3065 ,  H01L21/76898 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide crackstops for bulk semiconductor wafers and methods of fabrication. A die level crackstop is formed as a trench within the wafer around each die. A wafer level crackstop includes one or more trenches formed as rings around the periphery of the wafer near the wafer edge. These crackstops serve to prevent damage during handling of ultra thin wafers and dicing of individual ICs, thereby improving product yield.

Abstract translation: 本发明的实施例为块状半导体晶片提供裂缝和制造方法。 模具级裂缝形成为围绕每个模具的晶片内的沟槽。 晶片级裂缝包括在晶片边缘附近围绕晶片周边形成的环形成一个或多个沟槽。 这些裂缝用于防止在处理超薄晶片和切割各个IC时的损坏，从而提高产品产量。