公开(公告)号：US12074020B2

公开(公告)日：2024-08-27

申请号：US17960895

申请日：2022-10-06

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Mick Bjelopavlic ,  Carl Ballesteros

IPC分类号： H01L21/02 ,  H01L21/306

CPC分类号： H01L21/02019 ,  H01L21/30604

摘要： The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

公开(公告)号：US20240136173A1

公开(公告)日：2024-04-25

申请号：US18546434

申请日：2022-02-04

申请人： SILTRONIC AG

发明人： Georg Pietsch ,  Joachim Junge

IPC分类号： H01L21/02 ,  B24B7/22 ,  B24D7/06 ,  B28D5/04

CPC分类号： H01L21/02019 ,  B24B7/228 ,  B24D7/06 ,  B28D5/045 ,  B28D7/02

摘要： A method produces wafers from a cylindrical ingot of semiconductor material having an axis and an indexing notch in an outer surface of the cylindrical ingot and parallel to the axis. The method includes, in the order specified: (a) simultaneous removal of a multiplicity of sliced wafers from the cylindrical ingot by multi-wire slicing in the presence of a cutting agent; (b) etching of the sliced wafers with an alkaline etchant in an etching bath at a temperature of 20° C. to 50° C. and for a residence time, such that the material removed from each of the sliced wafers is less than 5/1000 of an initial wafer thickness; and (c) grinding of the etched wafers by simultaneous double-disk grinding using an annular abrasive covering.

公开(公告)号：US20240097072A1

公开(公告)日：2024-03-21

申请号：US17941192

申请日：2022-09-09

申请人： PALO ALTO RESEARCH CENTER INCORPORATED

发明人： Max Batres ,  Thomas Wunderer

IPC分类号： H01L33/32 ,  H01L21/02

CPC分类号： H01L33/32 ,  H01L21/02013 ,  H01L21/02019 ,  H01L21/0254

摘要： A semiconductor device is formed on a bulk substrate of n-type GaN. The semiconductor device has a material layer grown on the bulk substrate. A first surface of the bulk substrate facing away from the material layer is mechanically roughened and a negative electrical contact is formed on the roughened surface using a low work function metal.

公开(公告)号：US11820929B2

公开(公告)日：2023-11-21

申请号：US17466531

申请日：2021-09-03

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Mick Bjelopavlic ,  Carl Ballesteros

IPC分类号： C09K13/08 ,  C09K13/06 ,  B01J27/16 ,  B01J27/02 ,  H01L21/02

CPC分类号： C09K13/08 ,  B01J27/02 ,  B01J27/16 ,  C09K13/06 ,  H01L21/02019

摘要： The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

公开(公告)号：US11682550B2

公开(公告)日：2023-06-20

申请号：US16787432

申请日：2020-02-11

申请人： Tech Met, Inc.

发明人： Michael Vidra ,  Robert Vaccaro ,  Edward Palanko ,  Mark Megela

IPC分类号： H01S3/00 ,  H01L21/02 ,  G02B27/09 ,  H01S5/00 ,  G02B27/30 ,  B23K26/352 ,  B23K26/362 ,  B23K26/402 ,  B23H3/00 ,  B26D7/26 ,  B26D3/08 ,  C23F1/00 ,  C23F1/02 ,  C23F1/04 ,  B23K26/0622 ,  B23K26/10 ,  B23K26/40 ,  B23K26/08 ,  B23K26/046 ,  B23K26/00 ,  B23K26/361 ,  G02B26/10 ,  H01S5/062 ,  B23K103/16 ,  B23K101/12 ,  B23K103/00 ,  B23K103/08 ,  B23K101/06 ,  B23K103/02

CPC分类号： H01L21/02019 ,  B23H3/00 ,  B23K26/0006 ,  B23K26/046 ,  B23K26/0622 ,  B23K26/0823 ,  B23K26/0869 ,  B23K26/103 ,  B23K26/352 ,  B23K26/355 ,  B23K26/361 ,  B23K26/362 ,  B23K26/40 ,  B23K26/402 ,  B26D3/08 ,  B26D7/2614 ,  C23F1/00 ,  C23F1/02 ,  C23F1/04 ,  G02B26/10 ,  G02B27/0955 ,  G02B27/0977 ,  G02B27/30 ,  H01L21/02675 ,  H01S3/0071 ,  H01S5/0071 ,  H01S5/0085 ,  H01S5/06243 ,  B23K2101/06 ,  B23K2101/12 ,  B23K2103/02 ,  B23K2103/08 ,  B23K2103/16 ,  B23K2103/42 ,  B23K2103/50 ,  B23K2103/52 ,  B23K2103/54

摘要： Systems and methods for etching complex patterns on an interior surface of a hollow object are disclosed. A method generally includes positioning a laser system within the hollow object with a focal point of the laser focused on the interior surface, and operating the laser system to form the complex pattern on the interior surface. Motion of the laser system and the hollow object is controlled by a motion control system configured to provide rotation and/or translation about a longitudinal axis of one or both of the hollow object and the laser system based on the complex pattern, and change a positional relationship between a reflector and a focusing lens of the laser system to accommodate a change in distance between the reflector and the interior surface of the hollow object.

公开(公告)号：US20190228127A1

公开(公告)日：2019-07-25

申请号：US15879788

申请日：2018-01-25

申请人： UNITED MICROELECTRONICS CORP.

发明人： Tsung-Yeh WU ,  Chia-Wei HUANG ,  Yung-Feng CHENG

IPC分类号： G06F17/50 ,  H01L21/033 ,  H01L21/02

CPC分类号： G06F17/5072 ,  H01L21/02019 ,  H01L21/0337

摘要： A method for generating masks for manufacturing of a semiconductor structure comprises the following steps. A design pattern for features to be formed on a substrate is divided into a first set of patterns and a second set of patterns. The first set of patterns comprises a first pattern corresponding to a first feature, the second set of patterns comprises two second patterns corresponding to two second features, and the first feature will be arranged between the two second features when the features are formed on a substrate. Two assist feature patterns are added into the first set of patterns. The two assist feature patterns are arranged in locations corresponding to the two second features, respectively. A first mask is generated based on the first set of patterns with the assist feature patterns. A second mask is generated based on the second set of patterns.

公开(公告)号：US20180358220A1

公开(公告)日：2018-12-13

申请号：US15640345

申请日：2017-06-30

申请人： Lam Research Corporation

发明人： Yongsik Yu ,  David Wingto Cheung ,  Kirk J. Ostrowski ,  Nikkon Ghosh ,  Karthik S. Colinjivadi ,  Samantha Tan ,  Nathan Musselwhite ,  Mark Naoshi Kawaguchi

IPC分类号： H01L21/02

CPC分类号： H01L21/02019 ,  C01B7/0743 ,  C01B21/0835 ,  H01L21/02115

摘要： Methods and apparatuses for etching metal-doped carbon-containing materials are provided herein. Etching methods include using a mixture of an etching gas suitable for etching the carbon component of the metal-doped carbon-containing material and an additive gas suitable for etching the metal component of the metal-doped carbon-containing material and igniting a plasma to selectively remove metal-doped carbon-containing materials relative to underlayers such as silicon oxide, silicon nitride, and silicon, at high temperatures. Apparatuses suitable for etching metal-doped carbon-containing materials are equipped with a high temperature movable pedestal, a plasma source, and a showerhead between a plasma generating region and the substrate.

公开(公告)号：US10062580B2

公开(公告)日：2018-08-28

申请号：US15245593

申请日：2016-08-24

申请人： FUJIFILM Corporation

发明人： Atsushi Mizutani ,  Tetsuya Kamimura

IPC分类号： H01L21/302 ,  H01L21/461 ,  C03C15/00 ,  C03C25/68 ,  H01L21/3213 ,  C23F1/10 ,  C23F1/14 ,  H01L21/02 ,  C23F1/00 ,  C23F1/26 ,  C23F1/30 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/32134 ,  C23F1/00 ,  C23F1/10 ,  C23F1/14 ,  C23F1/26 ,  C23F1/30 ,  H01L21/02019 ,  H01L21/02381 ,  H01L29/665 ,  H01L29/78

摘要： Provided is an etchant for a semiconductor process, which contains a sulfonic acid compound, a halogen ion, nitric acid or a nitric acid ion, an organic cation, and water.

公开(公告)号：US20180233358A1

公开(公告)日：2018-08-16

申请号：US15906596

申请日：2018-02-27

申请人： KWANSEI GAKUIN EDUCATIONAL FOUNDATION

发明人： Tadaaki Kaneko ,  Noboru Ohtani ,  Kenta Hagiwara

IPC分类号： H01L21/02 ,  H01L21/04 ,  H01L21/306 ,  H01L29/16 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687 ,  H01L21/324 ,  H01L29/04 ,  H01L21/302 ,  C30B31/22 ,  H01L21/3065 ,  C30B29/36

CPC分类号： H01L21/02529 ,  C30B29/36 ,  C30B31/22 ,  H01L21/02019 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02658 ,  H01L21/0415 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/0485 ,  H01L21/049 ,  H01L21/302 ,  H01L21/30625 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67757 ,  H01L21/68764 ,  H01L21/68771 ,  H01L29/045 ,  H01L29/1608

摘要： In this method for manufacturing a semiconductor element, a modified layer produced by subjecting a substrate (70) to mechanical polishing is removed by heating the substrate (70) under Si vapor pressure. An epitaxial layer formation step, an ion implantation step, an ion activation step, and a second removal step are then performed. In the second removal step, macro-step bunching and insufficient ion-implanted portions of the surface of the substrate (70) performed the ion activation step are removed by heating the substrate (70) under Si vapor pressure. After that, an electrode formation step in which electrodes are formed on the substrate (70) is performed.

公开(公告)号：US20180195178A1

公开(公告)日：2018-07-12

申请号：US15841999

申请日：2017-12-14

申请人： SCREEN Holdings Co., Ltd.

发明人： Masayuki OTSUJI

IPC分类号： C23F1/02 ,  H01L21/02

CPC分类号： C23F1/02 ,  H01L21/02019 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68792

摘要： In a substrate processing method, a liquid film 30 of a processing liquid is formed on an upper surface of a substrate W, a gas which comprising vapor of a low surface tension liquid is sprayed to the liquid film 30 to form a liquid film-removed region 31. The liquid film-removed region 31 is expanded. A coolant 29 is supplied to a lower surface of the substrate W, while the liquid film 30 is cooled to a temperature lower than the boiling point of the low surface tension liquid, a heated gas is sprayed to selectively remove the coolant 29, and a range 33 in which the coolant 29 is removed is heated by a heated gas, by which the liquid film-removed region 31 on the upper surface of the substrate W is selectively heated to a temperature not less than the boiling point of the low surface tension liquid, and also a range which heats the liquid film-removed region 31 is expanded in synchronization with expansion of the liquid film-removed region 31.