公开(公告)号：US20200051808A1

公开(公告)日：2020-02-13

申请号：US16102066

申请日：2018-08-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Carsten Metze ,  Berthold Reimer ,  Simeon Morvan

IPC: H01L21/02 ,  H01L27/12 ,  H01L21/762 ,  H01L21/321 ,  H01L21/324 ,  H01L21/8234

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A first channel region containing a first semiconductor material and a second channel region containing a second semiconductor material are formed over a buried insulating layer of a silicon-on-insulator substrate. A first gate electrode of a first field-effect transistor is formed over the first channel region. A second gate electrode of a second field-effect transistor is formed over the second channel region. The first semiconductor material of the first channel region has a first germanium concentration. The second semiconductor material of the second channel region has a second germanium concentration that is greater than the first germanium concentration in the first semiconductor material of the first channel region.

公开(公告)号：US10559593B1

公开(公告)日：2020-02-11

申请号：US16102066

申请日：2018-08-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Carsten Metze ,  Berthold Reimer ,  Simeon Morvan

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/8234 ,  H01L21/321 ,  H01L21/324 ,  H01L21/762

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A first channel region containing a first semiconductor material and a second channel region containing a second semiconductor material are formed over a buried insulating layer of a silicon-on-insulator substrate. A first gate electrode of a first field-effect transistor is formed over the first channel region. A second gate electrode of a second field-effect transistor is formed over the second channel region. The first semiconductor material of the first channel region has a first germanium concentration. The second semiconductor material of the second channel region has a second germanium concentration that is greater than the first germanium concentration in the first semiconductor material of the first channel region.